2SK374P datasheet, PDF - EEWORLD Datasheet

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2SK374P: DescriptionSmall Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size32KB，2 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SK374P Overview

Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN

2SK374P Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Maximum drain current (ID)	0.03 A
FET technology	JUNCTION
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Silicon Junction FETs (Small Signal)

2SK374

Silicon N-Channel Junction FET

For low-frequency amplification

For switching

0.65±0.15

+0.2

unit: mm

0.65±0.15

2.8

–0.3

1.5

–0.05

+0.25

s

Features

q

Low noise-figure (NF)

q

High gate to drain voltage V

GDO

q

Mini-type package, allowing downsizing of the sets and automatic

insertion through the tape/magazine packing.

0.95

2.9

–0.05

1

1.9±0.2

+0.2

0.95

3

0.4

–0.05

+0.1

2

1.45

Drain to Source voltage

Gate to Drain voltage

Gate to Source voltage

Drain current

Gate current

Allowable power dissipation

Channel temperature

Storage temperature

V

DSX

V

GDO

V

GSO

I

D

I

G

P

D

T

ch

T

stg

55

−55

30

10

200

150

−55

to +150

V

mA

mW

°C

1: Source

2: Drain

3: Gate

JEDEC: TO-236

EIAJ: SC-59

Mini Type Package (3-pin)

Marking Symbol (Example): 2B

s

Electrical Characteristics

(Ta = 25°C)

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

Gate to Source cut-off voltage

Mutual conductance

Symbol

I

DSS*

I

GSS

V

GDC

V

GSC

g

m

Conditions

V

DS

= 10V, V

GS

= 0

V

GS

=

−30V,

V

DS

= 0

I

G

=

−100µA,

V

DS

= 0

V

DS

= 10V, I

D

= 10µA

V

DS

= 10V, I

D

= 5mA, f = 1kHz

V

DS

= 10V, V

GS

= 0, f = 1MHz

V

DS

= 10V, V

GS

= 0, R

g

= 100kΩ

f = 100Hz

2.5

7.5

6.5

1.9

2.5

−55

−80

−5

min

1

typ

max

20

−10

Unit

mA

nA

V

mS

pF

dB

Input capacitance (Common Source) C

iss

Reverse transfer capacitance (Common Source) C

rss

Noise figure

NF

*

I

DSS

rank classification

Runk

I

DSS

(mA)

P

1 to 3

2BP

Q

2 to 6.5

2BQ

R

5 to 12

2BR

S

10 to 20

2BS

Marking Symbol

0 to 0.1

Parameter

Symbol

Ratings

Unit

0.1 to 0.3

0.4±0.2

0.8

s

Absolute Maximum Ratings

(Ta = 25°C)

1.1

–0.1

0.16

–0.06

+0.2

+0.1

1

2SK374P Related Products

	2SK374P	2SK374S	2SK374R	2SK374Q
Description	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, MINI3-G1, SC-59, 3 PIN
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum drain current (ID)	0.03 A	0.03 A	0.03 A	0.03 A
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JEDEC-95 code	TO-236	TO-236	TO-236	TO-236
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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