BS62LV2007HCP70 datasheet, PDF

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BS62LV2007HCP70: DescriptionStandard SRAM, 256KX8, 70ns, CMOS, PBGA36; Categorystorage storage; File Size242KB，8 Pages; ManufacturerBrilliance; Environmental Compliance

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BS62LV2007HCP70 Overview

Standard SRAM, 256KX8, 70ns, CMOS, PBGA36

BS62LV2007HCP70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Brilliance
package instruction	FBGA, BGA36,6X8,30
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B36
memory density	2097152 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of terminals	36
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA36,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL
power supply	3/5 V
Certification status	Not Qualified
Maximum standby current	5e-7 A
Minimum standby current	1.5 V
Maximum slew rate	0.035 mA
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM

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BSI

FEATURES

Very Low Power/Voltage CMOS SRAM

256K X 8 bit

DESCRIPTION

BS62LV2007

• Wide Vcc operation voltage : 2.4V ~ 5.5V

• Very low power consumption :

Vcc = 3.0V C-grade : 20mA (Max.) operating current

I- grade : 25mA (Max.) operating current

0.1uA (Typ.) CMOS standby current

Vcc = 5.0V C-grade : 35mA (Max.) operating current

I- grade : 40mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

• High speed access time :

-70

70ns(Max.) at Vcc = 3.0V

-10

100ns(Max.) at Vcc = 3.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2, CE1, and OE options

The BS62LV2007 is a high performance , very low power CMOS

Static Random Access Memory organized as 262,144 words by 8 bits

and operates in a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.1uA and maximum access time of 70ns in 3V operation.

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

The BS62LV2007 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62LV2007 is available in the JEDEC standard 36 ball Mini

BGA 6x8 mm.

PRODUCT FAMILY

PRODUCT

FAMILY

OPERATING

TEMPERATURE

Vcc

RANGE

SPEED

(ns)

Vcc=

3.0V

POWER DISSIPATION

STANDBY

Operating

CCSB1

, Max)

Vcc=

5.0V

3.0V

, Max)

Vcc=

5.0V

3.0V

PKG

TYPE

BS62LV2007HC

C to +70

2.4V ~5.5V

-40

C to +85

70/100

6 uA

0.7 uA

35 mA

20 mA

BGA-36-

0608

BS62LV2007HI

70/100

25 uA

1.5 uA

40 mA

25 mA

PIN CONFIGURATIONS

BLOCK DIAGRAM

A13

A17

A15

A16

A14

A12

Address

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 2048

2048

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Input

Buffer

Column I/O

Write Driver

Sense Amp

256

Column Decoder

Control

Address Input Buffer

Data

Output

Buffer

CE1

CE2

Vdd

Gnd

A11 A9 A8 A3 A2 A1 A0 A10

Brilliance Semiconductor, Inc

reserves the right to modify document contents without notice.

R0201-BS62LV2007

Revision 2.1

Jan.

2004

BS62LV2007HCP70 Related Products

	BS62LV2007HCP70	BS62LV2007HIP10	BS62LV2007HIG70	BS62LV2007HI10
Description	Standard SRAM, 256KX8, 70ns, CMOS, PBGA36	Standard SRAM, 256KX8, 100ns, CMOS, PBGA36, MINIBGA-36	Standard SRAM, 256KX8, 70ns, CMOS, PBGA36	Standard SRAM, 256KX8, 100ns, CMOS, PBGA36
Is it Rohs certified?	conform to	conform to	conform to	incompatible
package instruction	FBGA, BGA36,6X8,30	LFBGA, BGA36,6X8,30	FBGA, BGA36,6X8,30	FBGA, BGA36,6X8,30
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	70 ns	100 ns	70 ns	100 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B36	R-PBGA-B36	R-PBGA-B36	R-PBGA-B36
memory density	2097152 bit	2097152 bit	2097152 bit	2097152 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8
Humidity sensitivity level	3	3	3	3
Number of terminals	36	36	36	36
word count	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C
organize	256KX8	256KX8	256KX8	256KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	LFBGA	FBGA	FBGA
Encapsulate equivalent code	BGA36,6X8,30	BGA36,6X8,30	BGA36,6X8,30	BGA36,6X8,30
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	3/5 V	3/5 V	3/5 V	3/5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	5e-7 A	5e-7 A	5e-7 A	5e-7 A
Minimum standby current	1.5 V	1.5 V	1.5 V	1.5 V
Maximum slew rate	0.035 mA	0.04 mA	0.04 mA	0.04 mA
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Base Number Matches	-	1	1	1

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