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RXH125N03TB

Description
Power Field-Effect Transistor, 12.5A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
CategoryDiscrete semiconductor    The transistor   
File Size525KB,7 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance  
Download Datasheet Parametric View All

RXH125N03TB Overview

Power Field-Effect Transistor, 12.5A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

RXH125N03TB Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)12.5 A
Maximum drain current (ID)12.5 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)36 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Data Sheet
4V Drive Nch MOSFET
RXH125N03
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
(8)
(5)
(1)
(4)
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RXH125N03
Taping
TB
2500
Inner circuit
(8)
(7)
(6)
(5)
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
Limits
30
20
12.5
36
1.6
36
2.0
150
55
to
150
Unit
V
V
A
A
A
A
W
C
C
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
*1
*1
*2
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)
*
Limits
62.5
Unit
C
/ W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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