EEWORLDEEWORLDEEWORLD

Part Number

Search

FDMS86200DC

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size652KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FDMS86200DC Online Shopping

Suppliers Part Number Price MOQ In stock  
FDMS86200DC - - View Buy Now

FDMS86200DC Overview

POWER, FET

FDMS86200DC Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeQFN
package instructionROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Contacts8
Manufacturer packaging code8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)294 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)28 A
Maximum drain current (ID)9.3 A
Maximum drain-source on-resistance0.017 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-240AA
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)100 A
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DUAL COOL
PACKAGE POWERTRENCH
®
MOSFETs
Dual Cool
packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is
the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual
path thermal performance and improved parasitics over its wire-bonded predecessors, the use of a heat sink with
Dual Cool packaging technology provides even more impressive results. Test results prove that, when a heat sink
is used with our Dual Cool package technology, synchronous buck converters deliver higher output current and
increased power density. With Fairchild’s trench silicon technology, Dual Cool packaging technology proves to be a
clear leader in power density and thermal performance. Our Dual Cool package solutions are lead free and RoHS
compliant and are available in 3.3 mm x 3.3 mm and 5 mm x 6 mm PQFN packages.
Features
Top-side cooling, lower thermal resistance from
junction to top
Same land pattern as 5 mm x 6 mm and
3.3 mm x 3.3 mm PQFN – JEDEC standard
Allows higher current and power dissipation
Highest power density for DC-DC applications
Use with or without a heat sink, reduces the
number of qualified components in the BOM
Multiple suppliers without cross licensing
requirements
High degree of production commonality with
standard PQFN packaging
25 V - 150 V portfolio
Top
Bottom
3.3 mm x 3.3 mm
&
5 mm x 6 mm
Maximum Power Dissipation
Dual Cool Package
3.3mm x 3.3mm
Capable of >60% Better Thermal Performance
Air Flow =
200LFM
No Air Flow
Applications
Point-of-load (POL) synchronous-buck conversion
Servers
Telecommunications, routing and switching
Heat path from top only
Standard PQFN
3.3mm x 3.3mm
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Power Loss (W) T
J
Max. = 90°C, T
a
=50°C
5mm x 6mm Package
Interconnect
PQFN Wire
PQFN Clip
Dual Cool Package
Environment: Minimum Pad, Heat Sink, 200LFM Forced Air
Q
JA
(°C/W)
27.1
23.8
17.2
(%) Improvement from Wire Package
-
13.9
57.5
fairchildsemi.com

FDMS86200DC Related Products

FDMS86200DC FDMS3016DC FDMS8570SDC FDMS3008SDC FDMS86101DC
Description POWER, FET 30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA 30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA 30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA POWER, FET
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1 1
Number of terminals 5 5 5 5 5
surface mount YES Yes YES Yes YES
Terminal form FLAT NO FLAT NO FLAT
Terminal location DUAL pair DUAL pair DUAL
transistor applications SWITCHING switch SWITCHING switch SWITCHING
Transistor component materials SILICON silicon SILICON silicon SILICON
Brand Name Fairchild Semiconduc - Fairchild Semiconduc - Fairchild Semiconductor
Is it lead-free? Lead free - Lead free - Lead free
Is it Rohs certified? conform to - conform to - conform to
Maker Fairchild - Fairchild - Fairchild
Parts packaging code QFN - QFN - QFN
package instruction ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 - ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 - ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Contacts 8 - 8 - 8
Manufacturer packaging code 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM - 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM - 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM
Reach Compliance Code _compli - _compli - not_compliant
ECCN code EAR99 - EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 294 mJ - 45 mJ - 216 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 150 V - 25 V - 100 V
Maximum drain current (Abs) (ID) 28 A - 60 A - 60 A
Maximum drain current (ID) 9.3 A - 28 A - 14.5 A
Maximum drain-source on-resistance 0.017 Ω - 0.0028 Ω - 0.0075 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MO-240AA - MO-240AA - MO-240AA
JESD-30 code R-PDSO-F5 - R-PDSO-F5 - R-PDSO-F5
JESD-609 code e3 - e3 - e3
Humidity sensitivity level 1 - 1 - 1
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260 - 260
Polarity/channel type N-CHANNEL - N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 125 W - 59 W - 125 W
Maximum pulsed drain current (IDM) 100 A - 100 A - 200 A
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) - Matte Tin (Sn)
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED
[STM32F1] STM32 configuration file problem
I built a project using Keil 5 according to the project settings and textbooks. Using the same file, the file under Keil Flash Down can start oscillating, but my own file cannot. I compared the config...
lixmlxm stm32/stm8
Xilinx FPGA(CPLD) Download Cable Schematic
Xilinx FPGA(CPLD) Download Cable Schematic...
lorant FPGA/CPLD
How to use wire connectors?
In the electronics industry, what does a wire connector look like? How do you use it? I think many people don't know. This article will explain it to you. Wire connectors are a very important category...
zhuqi123456 Automotive Electronics
Electronic Competition Question B
Help, help! ! Has anyone solved the problem of question B not being able to blow?...
qq慢蜗牛 Electronics Design Contest
7.5KW motor hard start problem?
Recently, a friend wants to install a water pump with a motor power of 7.5KW (three-phase power supply 380V). He does not want to buy a soft starter or a frequency converter, but a hard starter. Does ...
bigbat Power technology
How to switch after vi opens four files
As shown in the picture below, it will not switch between them. Please help me [img=110,0]https://bbs.eeworld.com.cn/forum.php?mod=image&aid=294737&size=300x300&key=d47a8cf127b764e4&nocache=yes&type=f...
a10tion Linux and Android

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1847  1015  2376  2015  2683  38  21  48  41  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号