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FDMS3008SDC

Description
30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA
Categorysemiconductor    Discrete semiconductor   
File Size652KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FDMS3008SDC Overview

30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA

FDMS3008SDC Parametric

Parameter NameAttribute value
Number of terminals5
Minimum breakdown voltage30 V
Processing package descriptionROHS COMPLIANT, Plastic, POWER 33, QFN-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeSQUARE
Package SizeSMALL OUTLINE
surface mountYes
Terminal formNO
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current30 A
Rated avalanche energy220 mJ
Maximum drain on-resistance0.0022 ohm
Maximum leakage current pulse200 A
DUAL COOL
PACKAGE POWERTRENCH
®
MOSFETs
Dual Cool
packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is
the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual
path thermal performance and improved parasitics over its wire-bonded predecessors, the use of a heat sink with
Dual Cool packaging technology provides even more impressive results. Test results prove that, when a heat sink
is used with our Dual Cool package technology, synchronous buck converters deliver higher output current and
increased power density. With Fairchild’s trench silicon technology, Dual Cool packaging technology proves to be a
clear leader in power density and thermal performance. Our Dual Cool package solutions are lead free and RoHS
compliant and are available in 3.3 mm x 3.3 mm and 5 mm x 6 mm PQFN packages.
Features
Top-side cooling, lower thermal resistance from
junction to top
Same land pattern as 5 mm x 6 mm and
3.3 mm x 3.3 mm PQFN – JEDEC standard
Allows higher current and power dissipation
Highest power density for DC-DC applications
Use with or without a heat sink, reduces the
number of qualified components in the BOM
Multiple suppliers without cross licensing
requirements
High degree of production commonality with
standard PQFN packaging
25 V - 150 V portfolio
Top
Bottom
3.3 mm x 3.3 mm
&
5 mm x 6 mm
Maximum Power Dissipation
Dual Cool Package
3.3mm x 3.3mm
Capable of >60% Better Thermal Performance
Air Flow =
200LFM
No Air Flow
Applications
Point-of-load (POL) synchronous-buck conversion
Servers
Telecommunications, routing and switching
Heat path from top only
Standard PQFN
3.3mm x 3.3mm
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Power Loss (W) T
J
Max. = 90°C, T
a
=50°C
5mm x 6mm Package
Interconnect
PQFN Wire
PQFN Clip
Dual Cool Package
Environment: Minimum Pad, Heat Sink, 200LFM Forced Air
Q
JA
(°C/W)
27.1
23.8
17.2
(%) Improvement from Wire Package
-
13.9
57.5
fairchildsemi.com

FDMS3008SDC Related Products

FDMS3008SDC FDMS3016DC FDMS8570SDC FDMS86200DC FDMS86101DC
Description 30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA 30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA 30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA POWER, FET POWER, FET
Number of terminals 5 5 5 5 5
surface mount Yes Yes YES YES YES
Terminal form NO NO FLAT FLAT FLAT
Terminal location pair pair DUAL DUAL DUAL
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1 1
transistor applications switch switch SWITCHING SWITCHING SWITCHING
Transistor component materials silicon silicon SILICON SILICON SILICON
Brand Name - - Fairchild Semiconduc Fairchild Semiconduc Fairchild Semiconductor
Is it lead-free? - - Lead free Lead free Lead free
Is it Rohs certified? - - conform to conform to conform to
Maker - - Fairchild Fairchild Fairchild
Parts packaging code - - QFN QFN QFN
package instruction - - ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Contacts - - 8 8 8
Manufacturer packaging code - - 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM
Reach Compliance Code - - _compli _compli not_compliant
ECCN code - - EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - - 45 mJ 294 mJ 216 mJ
Configuration - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - - 25 V 150 V 100 V
Maximum drain current (Abs) (ID) - - 60 A 28 A 60 A
Maximum drain current (ID) - - 28 A 9.3 A 14.5 A
Maximum drain-source on-resistance - - 0.0028 Ω 0.017 Ω 0.0075 Ω
FET technology - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - - MO-240AA MO-240AA MO-240AA
JESD-30 code - - R-PDSO-F5 R-PDSO-F5 R-PDSO-F5
JESD-609 code - - e3 e3 e3
Humidity sensitivity level - - 1 1 1
Operating mode - - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - - 150 °C 150 °C 150 °C
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - - 260 260 260
Polarity/channel type - - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - - 59 W 125 W 125 W
Maximum pulsed drain current (IDM) - - 100 A 100 A 200 A
Terminal surface - - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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