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FDMS86101DC

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size652KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDMS86101DC Overview

POWER, FET

FDMS86101DC Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeQFN
package instructionROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Contacts8
Manufacturer packaging code8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys DescriptionON SEMICONDUCTOR - FDMS86101DC - MOSFET, N-CH, 100V, 60A, DUAL COOL 56-8
Avalanche Energy Efficiency Rating (Eas)216 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)60 A
Maximum drain current (ID)14.5 A
Maximum drain-source on-resistance0.0075 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-240AA
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)200 A
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DUAL COOL
PACKAGE POWERTRENCH
®
MOSFETs
Dual Cool
packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is
the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual
path thermal performance and improved parasitics over its wire-bonded predecessors, the use of a heat sink with
Dual Cool packaging technology provides even more impressive results. Test results prove that, when a heat sink
is used with our Dual Cool package technology, synchronous buck converters deliver higher output current and
increased power density. With Fairchild’s trench silicon technology, Dual Cool packaging technology proves to be a
clear leader in power density and thermal performance. Our Dual Cool package solutions are lead free and RoHS
compliant and are available in 3.3 mm x 3.3 mm and 5 mm x 6 mm PQFN packages.
Features
Top-side cooling, lower thermal resistance from
junction to top
Same land pattern as 5 mm x 6 mm and
3.3 mm x 3.3 mm PQFN – JEDEC standard
Allows higher current and power dissipation
Highest power density for DC-DC applications
Use with or without a heat sink, reduces the
number of qualified components in the BOM
Multiple suppliers without cross licensing
requirements
High degree of production commonality with
standard PQFN packaging
25 V - 150 V portfolio
Top
Bottom
3.3 mm x 3.3 mm
&
5 mm x 6 mm
Maximum Power Dissipation
Dual Cool Package
3.3mm x 3.3mm
Capable of >60% Better Thermal Performance
Air Flow =
200LFM
No Air Flow
Applications
Point-of-load (POL) synchronous-buck conversion
Servers
Telecommunications, routing and switching
Heat path from top only
Standard PQFN
3.3mm x 3.3mm
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Power Loss (W) T
J
Max. = 90°C, T
a
=50°C
5mm x 6mm Package
Interconnect
PQFN Wire
PQFN Clip
Dual Cool Package
Environment: Minimum Pad, Heat Sink, 200LFM Forced Air
Q
JA
(°C/W)
27.1
23.8
17.2
(%) Improvement from Wire Package
-
13.9
57.5
fairchildsemi.com

FDMS86101DC Related Products

FDMS86101DC FDMS3016DC FDMS8570SDC FDMS86200DC FDMS3008SDC
Description POWER, FET 30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA 30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA POWER, FET 30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240BA
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1 1
Number of terminals 5 5 5 5 5
surface mount YES Yes YES YES Yes
Terminal form FLAT NO FLAT FLAT NO
Terminal location DUAL pair DUAL DUAL pair
transistor applications SWITCHING switch SWITCHING SWITCHING switch
Transistor component materials SILICON silicon SILICON SILICON silicon
Brand Name Fairchild Semiconductor - Fairchild Semiconduc Fairchild Semiconduc -
Is it lead-free? Lead free - Lead free Lead free -
Is it Rohs certified? conform to - conform to conform to -
Maker Fairchild - Fairchild Fairchild -
Parts packaging code QFN - QFN QFN -
package instruction ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 - ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 -
Contacts 8 - 8 8 -
Manufacturer packaging code 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM - 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM -
Reach Compliance Code not_compliant - _compli _compli -
ECCN code EAR99 - EAR99 EAR99 -
Avalanche Energy Efficiency Rating (Eas) 216 mJ - 45 mJ 294 mJ -
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 100 V - 25 V 150 V -
Maximum drain current (Abs) (ID) 60 A - 60 A 28 A -
Maximum drain current (ID) 14.5 A - 28 A 9.3 A -
Maximum drain-source on-resistance 0.0075 Ω - 0.0028 Ω 0.017 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code MO-240AA - MO-240AA MO-240AA -
JESD-30 code R-PDSO-F5 - R-PDSO-F5 R-PDSO-F5 -
JESD-609 code e3 - e3 e3 -
Humidity sensitivity level 1 - 1 1 -
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C - 150 °C 150 °C -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 - 260 260 -
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 125 W - 59 W 125 W -
Maximum pulsed drain current (IDM) 200 A - 100 A 100 A -
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
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