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UMA4NT1, UMA6NT1
Preferred Devices
Dual Common Emitter Bias
Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
BRT devices are housed in the SOT−353 package which is ideal for
low power surface mount applications where board space is at a
premium.
Features
3
2
1
R1
R1
Q1
4
Q2
5
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Pb−Free Packages are Available
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
SC−88A/SOT−353
CASE 419A
STYLE 7
Ux M
G
G
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
(Surface Mounted)
Operating and Storage Temperature Range
Total Package Dissipation @ T
A
= 25°C
(Note 1)
R
qJA
T
J
, T
stg
P
D
833
−65 to +150
*150
°C/W
°C
mW
Ux = Device Code
x = 0 or 1
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
UMA4NT1
UMA4NT1G
UMA6NT1
Package
SOT−353
SOT−353
(Pb−Free)
SOT−353
SOT−353
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
DEVICE RESISTOR VALUES
Device
UMA4NT1
UMA6NT1
R1 (K)
10
47
R2 (K)
∞
∞
UMA6NT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 4
Publication Order Number:
UMA4NT1/D
UMA4NT1, UMA6NT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CB
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0, I
C
= 5.0 mA)
ON CHARACTERISTICS
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
Collector−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
UMA4NT1
UMA6NT1
UMA4NT1
UMA6NT1
V
(BR)CBO
V
(BR)CEO
h
FE
V
CE(SAT)
V
OL
V
OH
R1
50
50
160
160
−
−
4.9
7.0
33
−
−
250
250
−
−
−
10
47
−
−
−
−
0.25
0.2
−
13
61
Vdc
Vdc
Vdc
kW
Vdc
Vdc
UMA4NT1
UMA6NT1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
100
500
0.9
0.2
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
R
qJA
= 833°C/W
0
−50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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2
UMA4NT1, UMA6NT1
TYPICAL ELECTRICAL CHARACTERISTICS − UMA4NT1
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
10
I
C
/I
B
= 10
25°C
1000
T
A
= 75°C
100
25°C
−25°C
1
T
A
= 75°C
−25°C
h
FE
, DC CURRENT GAIN
0.1
10
V
CE
= 10 V
1
0.01
0
10
20
30
40
50
60
I
C
, COLLECTOR CURRENT (mA)
70
80
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 2. V
CE(sat)
versus I
C
12
10
8
6
4
2
0
I
C
, COLLECTOR CURRENT (mA)
f = 1 MHz
I
E
= 0 mA
T
A
= 25°C
100
Figure 3. DC Current Gain
C
ob
, CAPACITANCE (pF)
10
75°C
T
A
= −25°C
25°C
0.1
V
O
= 5 V
0
1
2
3
4
V
IN
, INPUT VOLTAGE (VOLTS)
5
6
1
0
5
10
15
20
25
30
40
35
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
45
0.01
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
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3
UMA4NT1, UMA6NT1
TYPICAL ELECTRICAL CHARACTERISTICS − UMA6NT1
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
10
I
C
/I
B
= 10
25°C
1
−25°C
T
A
= 75°C
0.1
1000
h
FE
, DC CURRENT GAIN
T
A
= 75°C
25°C
100
−25°C
V
CE
= 10 V
0.01
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
60
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 6. V
CE(sat)
versus I
C
12
10
8
6
4
2
0
I
C
, COLLECTOR CURRENT (mA)
f = 1 MHz
I
E
= 0 mA
T
A
= 25°C
100
Figure 7. DC Current Gain
75°C
10
T
A
= −25°C
25°C
C
ob
, CAPACITANCE (pF)
1
0.1
0.01
V
O
= 5 V
0
1
2
3
4
V
IN
, INPUT VOLTAGE (VOLTS)
5
0
5
10
15
20
25
30
40
35
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
45
0.001
Figure 8. Output Capacitance
Figure 9. Output Current versus Input Voltage
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