2SA1318
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-0.2 A, -60 V
PNP Plastic Encapsulated Transistor
FEATURES
TO-92
Large Current Capacity and Wide ASO
G
H
APPLICATIONS
Capable of Being Used in The Low Frequency to High
Frequency Range
A
J
D
B
K
Emitter
Collector
Base
CLASSIFICATION OF h
FE(1)
Product-Rank
2SA1318-R 2SA1318-S 2SA1318-T 2SA1318-U
Range
100~200
140~280
200~400
280~560
E
REF.
A
B
C
D
E
F
G
H
J
K
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-60
-50
-6
-0.2
500
250
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min
-60
-50
-6
-
-
100
70
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
200
4.5
Max
-
-
-
-0.1
-0.1
560
-
-0.3
-1.0
-
-
Unit
V
V
V
μA
μA
Test condition
I
C
= -0.01mA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -0.01mA, I
C
=0
V
CB
= -40V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -0.1mA
I
C
= -0.1A, I
B
= -10mA
I
C
= -0.1A, I
B
= -10mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -6V, f=1MHz
V
V
MHz
pF
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A
Page 1 of 1
Microcontroller MCU
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