ST13007N-A datasheet, PDF - EEWORLD Datasheet

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ST13007N-A: Description8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size75KB，7 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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ST13007N-A Overview

8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN

ST13007N-A Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	not_compliant
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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ST13007N

ST13007NFP

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTORS

HIGH VOLTAGE CAPABILITY

NPN TRANSISTOR

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

VERY HIGH SWITCHING SPEED

APPLICATIONS

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

SWITCH MODE POWER SUPPLIES

DESCRIPTION

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and high voltage capability.

They use a Cellular Emitter structure to enhance

switching speeds.

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

CEV

CEO

EBO

t ot

stg

Parameter

ST13007N

Collector-Emitter Voltage (V

= -1.5V)

Collector-Emitter Voltage (I

= 0)

Emitter-Base Voltage (I

= 0)

Collector Current

Collector Peak Current

Base Current

Base Peak Current

Total Dissipation at T

≤

25 C

Storage T emperature

Max. O perating Junction Temperature

Value

ST13007NF P

700

400

-65 to 150

150

Uni t

March 1999

1/7

ST13007N-A Related Products

	ST13007N-A	ST13007N-B	ST13007NFP-B	ST13007NFP-A
Description	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220FP, 3 PIN	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220FP, 3 PIN
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	TO-220, 3 PIN	TO-220, 3 PIN	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3
Reach Compliance Code	not_compliant	compliant	unknown	unknown
Maximum collector current (IC)	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	400 V	400 V	400 V	400 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	26	26	15
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maker	STMicroelectronics	-	STMicroelectronics	STMicroelectronics

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