Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
IRLR7843PbF
IRLU7843PbF
3.3m
:
PD - 95440B
V
DSS
30V
R
DS(on)
max
Qg
34nC
D-Pak
IRLR7843PbF
I-Pak
IRLU7843PbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
161
620
140
71
0.95
-55 to + 175
300 (1.6mm from case)
Units
V
g
Maximum Power Dissipation
g
Maximum Power Dissipation
f
113
f
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.05
50
110
Units
°C/W
gÃ
–––
–––
–––
Notes
through
are on page 11
www.irf.com
1
04/30/08
IRLR/U7843PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min. Typ. Max. Units
30
–––
–––
–––
1.4
–––
–––
–––
–––
–––
37
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
19
2.6
3.2
–––
-5.4
–––
–––
–––
–––
–––
34
9.1
2.5
12
10
15
21
25
42
34
19
4380
940
430
–––
–––
3.3
4.0
2.3
–––
1.0
150
100
-100
–––
50
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
pF
nC
nC
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 15A
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 250µA
e
= 12A
e
mV/°C
µA V
DS
= 24V, V
GS
= 0V
nA
S
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 12A
See Fig. 16
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
ns
I
D
= 12A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
1440
12
14
e
Avalanche Characteristics
E
AS
I
AR
E
AR
Ã
d
–––
–––
–––
–––
–––
–––
–––
–––
39
36
Units
mJ
A
mJ
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
161
f
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/µs
A
620
1.0
59
54
V
ns
nC
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRLR/U7843PbF
1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
10
2.5V
10
1
2.5V
0.1
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
100
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current
(Α
)
ID = 30A
VGS = 10V
100
10
T J = 25°C
(Normalized)
T J = 175°C
1.5
1.0
1
2.0
3.0
VDS = 15V
20µs PULSE WIDTH
4.0
5.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRLR/U7843PbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds
Crss = C gd
Coss = Cds + Cgd
12
VGS, Gate-to-Source Voltage (V)
SHORTED
ID= 12A
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
T J = 175°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1.0
10.0
1msec
10msec
100.0
1000.0
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
1
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRLR/U7843PbF
160
LIMITED BY PACKAGE
2.5
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
120
2.0
ID = 250µA
1.5
80
1.0
40
0.5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.0
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
τ
C
τ
2
τ
0.1
Ri (°C/W)
0.5084
0.5423
τi
(sec)
0.000392
0.011108
0.01
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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