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IRLU7843-701PBF

Description
mosfet N-CH 30v 161a ipak
Categorysemiconductor    Discrete semiconductor   
File Size366KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
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IRLU7843-701PBF Overview

mosfet N-CH 30v 161a ipak

IRLU7843-701PBF Parametric

Parameter NameAttribute value
Datasheets
IRL(R,U)7843PbF
Product Photos
DPAK_369D−01
Product Training Modules
Discrete Power MOSFETs 40V and Below
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C161A (Tc)
Rds On (Max) @ Id, Vgs3.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) @ Vgs50nC @ 4.5V
Input Capacitance (Ciss) @ Vds4380pF @ 15V
Power - Max140W
Mounting TypeThrough Hole
Package / CaseTO-251-3 Long Leads, IPak, TO-251AB
Supplier Device PackageI-Pak
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
IRLR7843PbF
IRLU7843PbF
3.3m
:
PD - 95440B
V
DSS
30V
R
DS(on)
max
Qg
34nC
D-Pak
IRLR7843PbF
I-Pak
IRLU7843PbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
161
620
140
71
0.95
-55 to + 175
300 (1.6mm from case)
Units
V
g
Maximum Power Dissipation
g
Maximum Power Dissipation
™
f
113
f
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.05
50
110
Units
°C/W
–––
–––
–––
Notes

through
…
are on page 11
www.irf.com
1
04/30/08

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Description mosfet N-CH 30v 161a ipak HEXFET Power MOSFET mosfet N-CH 30v 161a dpak Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Is it Rohs certified? - incompatible conform to incompatible - conform to conform to incompatible
Maker - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code - TO-251AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
package instruction - IN-LINE, R-PSIP-T3 LEAD FREE, PLASTIC, DPAK-3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts - 3 3 3 3 3 3 3
Reach Compliance Code - compliant unknown unknown unknown unknown unknown compliant
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 1440 mJ 1440 mJ 1440 mJ 1440 mJ 1440 mJ 1440 mJ 1440 mJ
Shell connection - DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Maximum drain current (ID) - 30 A 30 A 30 A 30 A 30 A 30 A 30 A
Maximum drain-source on-resistance - 0.0033 Ω 0.0033 Ω 0.0033 Ω 0.0033 Ω 0.0033 Ω 0.0033 Ω 0.0033 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-251AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
JESD-30 code - R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code - e0 e3 e0 e0 e3 e3 e0
Humidity sensitivity level - 1 1 1 1 1 1 1
Number of components - 1 1 1 1 1 1 1
Number of terminals - 3 2 2 2 2 2 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 245 260 NOT SPECIFIED 260 260 260 245
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 620 A 620 A 620 A 620 A 620 A 620 A 620 A
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
surface mount - NO YES YES YES YES YES YES
Terminal surface - Tin/Lead (Sn/Pb) MATTE TIN OVER NICKEL TIN LEAD TIN LEAD MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL TIN LEAD
Terminal form - THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - 30 30 NOT SPECIFIED NOT SPECIFIED 30 30 30
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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