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IRLR7843HR

Description
Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size366KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRLR7843HR Overview

Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

IRLR7843HR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1440 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.0033 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)620 A
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
IRLR7843PbF
IRLU7843PbF
3.3m
:
PD - 95440B
V
DSS
30V
R
DS(on)
max
Qg
34nC
D-Pak
IRLR7843PbF
I-Pak
IRLU7843PbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
161
620
140
71
0.95
-55 to + 175
300 (1.6mm from case)
Units
V
g
Maximum Power Dissipation
g
Maximum Power Dissipation
™
f
113
f
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.05
50
110
Units
°C/W
–––
–––
–––
Notes

through
…
are on page 11
www.irf.com
1
04/30/08

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Description Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 HEXFET Power MOSFET mosfet N-CH 30v 161a dpak mosfet N-CH 30v 161a ipak Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Is it Rohs certified? incompatible incompatible conform to - incompatible - conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-252AA TO-251AA TO-252AA - TO-252AA TO-252AA TO-252AA TO-252AA
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 LEAD FREE, PLASTIC, DPAK-3 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 - 3 3 3 3
Reach Compliance Code compliant compliant unknown - unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 1440 mJ 1440 mJ 1440 mJ - 1440 mJ 1440 mJ 1440 mJ 1440 mJ
Shell connection DRAIN DRAIN DRAIN - DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V - 30 V 30 V 30 V 30 V
Maximum drain current (ID) 30 A 30 A 30 A - 30 A 30 A 30 A 30 A
Maximum drain-source on-resistance 0.0033 Ω 0.0033 Ω 0.0033 Ω - 0.0033 Ω 0.0033 Ω 0.0033 Ω 0.0033 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-251AA TO-252AA - TO-252AA TO-252AA TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0 e3 - e0 e0 e3 e3
Humidity sensitivity level 1 1 1 - 1 1 1 1
Number of components 1 1 1 - 1 1 1 1
Number of terminals 2 3 2 - 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245 245 260 - NOT SPECIFIED 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 620 A 620 A 620 A - 620 A 620 A 620 A 620 A
surface mount YES NO YES - YES YES YES YES
Terminal surface TIN LEAD Tin/Lead (Sn/Pb) MATTE TIN OVER NICKEL - TIN LEAD TIN LEAD MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal form GULL WING THROUGH-HOLE GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30 - NOT SPECIFIED NOT SPECIFIED 30 30
transistor applications SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON - SILICON SILICON SILICON SILICON
Certification status - Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
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