MRW53201 datasheet, PDF - EEWORLD Datasheet

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MRW53201: DescriptionRF Small Signal Bipolar Transistor, 1-Element, S Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size97KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MRW53201 Overview

RF Small Signal Bipolar Transistor, 1-Element, S Band, Silicon, NPN

MRW53201 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	DIFFUSED BALLAST RESISTORS
Collector-based maximum capacity	3.5 pF
Collector-emitter maximum voltage	22 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
highest frequency band	S BAND
JESD-30 code	O-CRDB-F4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	NPN
Minimum power gain (Gp)	7.5 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	3000 MHz

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MRW53201 Related Products

	MRW53201	MRW53401	MRW53101	MRW53501
Description	RF Small Signal Bipolar Transistor, 1-Element, S Band, Silicon, NPN	S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	RF Small Signal Bipolar Transistor, 1-Element, S Band, Silicon, NPN	S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
Reach Compliance Code	unknown	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	DIFFUSED BALLAST RESISTORS	DIFFUSED BALLAST RESISTORS	DIFFUSED BALLAST RESISTORS	DIFFUSED BALLAST RESISTORS
Collector-based maximum capacity	3.5 pF	3.5 pF	3.5 pF	3.5 pF
Collector-emitter maximum voltage	22 V	22 V	22 V	22 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20	20
highest frequency band	S BAND	S BAND	S BAND	S BAND
JESD-30 code	O-CRDB-F4	O-CRPM-F2	O-CRDB-F2	O-CRPM-F4
Number of components	1	1	1	1
Number of terminals	4	2	2	4
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	POST/STUD MOUNT	DISK BUTTON	POST/STUD MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN
Minimum power gain (Gp)	7.5 dB	7.5 dB	8.5 dB	7.5 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	NO
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	3000 MHz	3000 MHz	3000 MHz	3000 MHz

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