MRW53501 datasheet, PDF - EEWORLD Datasheet

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MRW53501: DescriptionS BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size97KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MRW53501 Overview

S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

MRW53501 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	DIFFUSED BALLAST RESISTORS
Collector-based maximum capacity	3.5 pF
Collector-emitter maximum voltage	22 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
highest frequency band	S BAND
JESD-30 code	O-CRPM-F4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Minimum power gain (Gp)	7.5 dB
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	3000 MHz

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MRW53501 Related Products

	MRW53501	MRW53401	MRW53201	MRW53101
Description	S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	RF Small Signal Bipolar Transistor, 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 1-Element, S Band, Silicon, NPN
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
Reach Compliance Code	unknow	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	DIFFUSED BALLAST RESISTORS	DIFFUSED BALLAST RESISTORS	DIFFUSED BALLAST RESISTORS	DIFFUSED BALLAST RESISTORS
Collector-based maximum capacity	3.5 pF	3.5 pF	3.5 pF	3.5 pF
Collector-emitter maximum voltage	22 V	22 V	22 V	22 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20	20
highest frequency band	S BAND	S BAND	S BAND	S BAND
JESD-30 code	O-CRPM-F4	O-CRPM-F2	O-CRDB-F4	O-CRDB-F2
Number of components	1	1	1	1
Number of terminals	4	2	4	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	DISK BUTTON	DISK BUTTON
Polarity/channel type	NPN	NPN	NPN	NPN
Minimum power gain (Gp)	7.5 dB	7.5 dB	7.5 dB	8.5 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	3000 MHz	3000 MHz	3000 MHz	3000 MHz

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