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MRW53401

Description
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size97KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MRW53401 Overview

S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

MRW53401 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionPOST/STUD MOUNT, O-CRPM-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresDIFFUSED BALLAST RESISTORS
Shell connectionEMITTER
Collector-based maximum capacity3.5 pF
Collector-emitter maximum voltage22 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandS BAND
JESD-30 codeO-CRPM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Minimum power gain (Gp)7.5 dB
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3000 MHz

MRW53401 Related Products

MRW53401 MRW53201 MRW53101 MRW53501
Description S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR RF Small Signal Bipolar Transistor, 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 1-Element, S Band, Silicon, NPN S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknown unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Other features DIFFUSED BALLAST RESISTORS DIFFUSED BALLAST RESISTORS DIFFUSED BALLAST RESISTORS DIFFUSED BALLAST RESISTORS
Collector-based maximum capacity 3.5 pF 3.5 pF 3.5 pF 3.5 pF
Collector-emitter maximum voltage 22 V 22 V 22 V 22 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20 20
highest frequency band S BAND S BAND S BAND S BAND
JESD-30 code O-CRPM-F2 O-CRDB-F4 O-CRDB-F2 O-CRPM-F4
Number of components 1 1 1 1
Number of terminals 2 4 2 4
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT DISK BUTTON DISK BUTTON POST/STUD MOUNT
Polarity/channel type NPN NPN NPN NPN
Minimum power gain (Gp) 7.5 dB 7.5 dB 8.5 dB 7.5 dB
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO YES YES NO
Terminal form FLAT FLAT FLAT FLAT
Terminal location RADIAL RADIAL RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 3000 MHz 3000 MHz 3000 MHz 3000 MHz
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