DSF11060SG
DSF11060SG
Fast Recovery Diode
Replaces January 2000 version, DS4217-3.0
DS4548-4.0 June 2004
APPLICATIONS
I
Snubber Diode For GTO Circuits
KEY PARAMETERS
V
RRM
6000V
I
F(AV)
400A
I
FSM
4200A
Q
r
700
µ
C
t
rr
6.0
µ
s
FEATURES
I
Double Side Cooling
I
High Surge Capability
I
Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
6000
5800
5600
5500
Conditions
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
V
RSM
= V
RRM
+ 100V
Outline type code: M779b.
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DSF11060SG58
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DSF11060SG
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
400
631
585
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
265
420
365
A
A
A
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
4.2
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
2
o
2
o
88 x 10
3
3.4
57.8 x 10
3
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 12kN
with mounting compound
Forward (conducting)
Double side
Single side
-
-
-
-
-55
10.8
0.064
0.008
0.016
135
125
13.2
o
Min.
dc
Anode dc
-
-
Max.
0.032
0.064
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
R
th(c-h)
Thermal resistance - case to heatsink
o
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
C
C
o
kN
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DSF11060SG
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 125
o
C
At T
vj
= 125
o
C
di/dt = 1000A/µs, T
j
= 100
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 125
o
C, V
R
= 100V
Parameter
Conditions
At 600A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 125
o
C
Typ.
-
-
6.0
-
350
1.7
-
-
-
Max.
3.8
70
-
1000
-
-
1.5
2.9
400
Units
V
mA
µs
µC
A
-
V
mΩ
V
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
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DSF11060SG
CURVES
10000
I
F
50µs
Q
S
=
0
Conditions:
T
j
= 125˚C,
V
R
= 100V
QS
1000
Conditions:
T
j
= 125˚C,
V
R
= 100V
A
B
C
Reverse recovered charge Q
rr
- (µC)
Reverse recovery current I
RR
- (A)
t
p
= 1ms
dI
R
/dt
I
RR
D
A
B
C
D
E
E
1000
100
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 500A
D: I
F
= 200A
E: I
F
= 100A
100
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
10
1
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 500A
D: I
F
= 200A
E: I
F
= 100A
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
Fig.2 Recovered charge
Fig.3 Typical reverse recovery current vs rate of rise of
forward current
0.100
d.c. Double side cooled
Thermal impedance, junction to case, Z
th(j-c)
- (˚C/W)
0.010
0.001
0.01
0.1
1
Time - (s)
10
100
Fig.4 Maximum (limit) transient thermal impedance -
junction to case - (˚C/W)
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DSF11060SG
PACKAGE DETAILS
(Alternative outline G includes gate connections, all other details are the same as M779b).
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode
Ø58.5 max
Ø34 nom
Ø34 nom
Anode
Nominal weight: 310g
Clamping force: 12kN ±10%
Package outline type code: M779b
27.0
25.4
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