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BD157

Description
Bipolar Transistors;NPN;0.5A;250V;TO-126
CategoryDiscrete semiconductor   
File Size206KB,2 Pages
ManufacturerInchange Semiconductor
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BD157 Overview

Bipolar Transistors;NPN;0.5A;250V;TO-126

BD157 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistor
BD157
DESCRIPTION
·Collector–Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 250V(Min)
·DC
Current Gain-
: h
FE
= 30~240(Min) @ I
C
= 50mA
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for power output stages for television, radio,
phonograph and other consumer product applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
i
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
275
250
5
0.5
1.0
0.25
20
150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
6.25
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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