MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF377/D
The RF MOSFET Line
RF Power Field-Effect Transistor
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in 32
volt digital television transmitter equipment.
•
Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts,
I
DQ
= 2.0 A, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain
≥
16.7 dB
Efficiency
≥
21%
ACPR
≤
–58 dBc
•
Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts,
I
DQ
= 2.0 A
Output Power — 80 Watts Avg.
Power Gain
≥
16.5 dB
Efficiency
≥
27.5%
IMD
≤
–31.3 dBc
•
Internally Input and Output Matched for Ease of Use
•
Integrated ESD Protection
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
(1)
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
N–Channel Enhancement–Mode Lateral MOSFET
MRF377
MRF377R3
MRF377R5
470 – 860 MHz, 240 W, 32 V
LATERAL N–CHANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375G–04, STYLE 1
NI–860C3
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
65
– 0.5, +15
17
486
2.78
– 65 to +150
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.36
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
(1) Each side of device measured separately.
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Class
1 (Minimum)
M3 (Minimum)
7 (Minimum)
REV 0
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF377 MRF377R3 MRF377R5
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10
µA)
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
1
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µA)
Gate Quiescent Voltage
(V
DS
= 32 Vdc, I
D
= 225 mA)
V
GS(th)
V
GS(Q)
V
DS(on)
—
—
—
2.8
3.5
0.27
—
—
—
Vdc
Vdc
Vdc
Freescale Semiconductor, Inc...
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 3 A)
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
3.2
—
pF
FUNCTIONAL CHARACTERISTICS
(In DVBT OFDM Single–Channel, Narrowband Fixture, 50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
G
ps
16.5
18.2
—
dB
η
21
22.9
—
%
ACPR
—
–59.2
–57
dBc
TYPICAL CHARACTERISTICS
(In DVBT OFDM Single–Channel, Broadband Fixture, 50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
(1) Each side of device measured separately.
(2) Measured in push–pull configuration.
G
ps
—
—
—
—
—
η
—
—
—
—
—
ACPR
—
—
—
—
—
–59.3
–59.3
–58.7
–58.7
–58.1
—
—
—
—
—
23.5
25.8
23.0
22.7
21.3
—
—
—
—
—
dBc
17.6
17.6
17.4
17.4
16.8
—
—
—
—
—
%
dB
MRF377 MRF377R3 MRF377R5
2
For More Information On This Product,
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
(In ATSC 8VSB Single–Channel, Broadband Fixture, 50 ohm system)
(2)
Characteristic
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
(2) Measured in push–pull configuration.
Symbol
G
ps
—
—
—
—
—
η
—
—
—
—
—
IMD
—
—
—
—
—
31.7
32.7
32.9
34.2
35.4
—
—
—
—
—
31.0
34.3
30.1
29.6
27.8
—
—
—
—
—
dBc
17.5
17.5
17.2
17.2
16.6
—
—
—
—
—
%
Min
Typ
Max
Unit
dB
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF377 MRF377R3 MRF377R5
3
Freescale Semiconductor, Inc.
Table 1. 845–875 MHz Narrowband Test Circuit Component Designations and Values
Part
B1, B2
Balun 1, Balun 2
C1
C2
C3
C4, C5
C6
C7, C8, C9, C10
C11, C12
C13, C14, C15, C16
C17, C18
C19, C20
C21, C22, C23, C24
Description
Ferrite Beads, Surface Mount, 11
Ω
(0805)
0.8–1GHz Xinger Balun
33 pF Chip Capacitor (0805)
2.7 pF Chip Capacitor (0603)
12 pF Chip Capacitor (0805)
6.8 pF Chip Capacitors (0805)
2.7 pF Chip Capacitor (0805)
3.3 pF Chip Capacitors (0805)
2.2
µF,
50 V Chip Capacitors
0.01
µF,
100 V Chip Capacitors
0.56
µF,
50 V Chip Capacitors
10
µF,
50 V Tantalum Chip Capacitors
47
µF,
16 V Tantalum Chip Capacitors
470
µF,
63 V Electrolytic Capacitors
12 nH Inductor (0603)
7.15 nH Inductor
10 nH Inductor (0603)
24
Ω,
1/8 W, 5% Chip Resistors (1206)
Brass Wear Shims
Arlon 30 mil,
ε
r
= 2.56
DS1152
DS Electronics
Value, P/N or DWG
2508051107Y0
3A412
08055J330JBT
06035J2R7BBT
08051J120GBT
08051J6R8BBT
0805J2R7BBT
08051J3R3BBT
C1825C225J5RAC3810
C1825C103J1GAC
C1825C564J5RAC
522Z050/100MTRE
TPSD476K016R0150
NACZF471M63V (18x22)
0603HC–12NXJB
1606–7
0603HC–10NXJB
Manufacturer
Fair–Rite
Anaran
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
Kemet
Kemet
Kemet
Tecate
AVX / Kyocera
Nippon
CoilCraft
CoilCraft
CoilCraft
Freescale Semiconductor, Inc...
C25, C26
L1
L2
L3, L4
R1, R2
WB1, WB2, WB3, WB4
PCB
MRF377 Gate
C19
V
GG
C22
Balun 1
C11
C9
C14
R1
WB1
L3
B1
C15
WB3
C18
MRF377 Drain
V
DD
C26
Balun 2
C21
L2
C5
C6
WB2
WB4
C1
C2
L1
C3
C4
C7
C8
R2
C13
C24
V
GG
C23
C12
L4
C10
B2
C16
C17
C25
V
DD
C20
DS1152-A Rev 0
DS1152-B Rev 0
Figure 1. 845–875 MHz Narrowband Test Circuit Component Layout
MRF377 MRF377R3 MRF377R5
4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL NARROWBAND CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
19
18.5
G ps , POWER GAIN (dB)
18
-20
-30
-40
1600 mA
-50
-60
-70
1800 mA
2000 mA
I
DQ
= 1400 mA
G
ps
17.5
17
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
10
100
P
out
, OUTPUT POWER (WATTS) PEP
2200 mA
16.5
16
V
DD
= 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
10
100
P
out
, OUTPUT POWER (WATTS) PEP
Freescale Semiconductor, Inc...
Figure 2. Two–Tone Power Gain versus
Output Power
Figure 3. Third Order Intermodulation Distortion
versus Output Power
-20
IMD, INTERMODULATION DISTORTION (dBc)
-30
η
, DRAIN EFFICIENCY (%)
-40
-50
-60
-70
-80
45
40
35
30
25
20
15
10
5
10
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
η
3rd Order
5th Order
7th Order
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
10
100
P
out
, OUTPUT POWER (WATTS) PEP
100
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
Figure 5. Two–Tone Drain Efficiency versus
Output Power
18
G ps , POWER GAIN (dB)
17
16
15
14
13
12
10
G
ps
40
20
η
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
IMD
0
-20
-40
-60
100
P
out
, OUTPUT POWER (WATTS) PEP
-80
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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η
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
19
60
MRF377 MRF377R3 MRF377R5
5
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