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MRF377

Description
RF POWER FIELD EFFECT TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size1MB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

MRF377 Overview

RF POWER FIELD EFFECT TRANSISTOR

MRF377 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMotorola ( NXP )
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)17 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)486 W
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF377/D
The RF MOSFET Line
RF Power Field-Effect Transistor
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in 32
volt digital television transmitter equipment.
Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts,
I
DQ
= 2.0 A, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain
16.7 dB
Efficiency
21%
ACPR
–58 dBc
Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts,
I
DQ
= 2.0 A
Output Power — 80 Watts Avg.
Power Gain
16.5 dB
Efficiency
27.5%
IMD
–31.3 dBc
Internally Input and Output Matched for Ease of Use
Integrated ESD Protection
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
(1)
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
N–Channel Enhancement–Mode Lateral MOSFET
MRF377
MRF377R3
MRF377R5
470 – 860 MHz, 240 W, 32 V
LATERAL N–CHANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375G–04, STYLE 1
NI–860C3
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
65
– 0.5, +15
17
486
2.78
– 65 to +150
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.36
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
(1) Each side of device measured separately.
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Class
1 (Minimum)
M3 (Minimum)
7 (Minimum)
REV 0
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF377 MRF377R3 MRF377R5
1

MRF377 Related Products

MRF377 MRF377R3 MRF377R5
Description RF POWER FIELD EFFECT TRANSISTOR RF POWER FIELD EFFECT TRANSISTOR RF POWER FIELD EFFECT TRANSISTOR
Is it Rohs certified? conform to conform to conform to
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknow unknow unknow
Configuration Single Single Single
Maximum drain current (Abs) (ID) 17 A 17 A 17 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C 200 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 486 W 486 W 486 W
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