MRF377R5 datasheet, PDF - EEWORLD Datasheet

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MRF377R5: DescriptionRF POWER FIELD EFFECT TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com; Environmental Compliance

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MRF377R5 Overview

RF POWER FIELD EFFECT TRANSISTOR

MRF377R5 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Motorola ( NXP )
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	17 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	486 W

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF377/D

The RF MOSFET Line

RF Power Field-Effect Transistor

Designed for broadband commercial and industrial applications with frequen-

cies from 470 to 860 MHz. The high gain and broadband performance of this

device make it ideal for large–signal, common source amplifier applications in 32

volt digital television transmitter equipment.

•

Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts,

= 2.0 A, 8K Mode, 64 QAM

Output Power — 45 Watts Avg.

Power Gain

≥

16.7 dB

Efficiency

≥

21%

ACPR

≤

–58 dBc

•

Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts,

= 2.0 A

Output Power — 80 Watts Avg.

Power Gain

≥

16.5 dB

Efficiency

≥

27.5%

IMD

≤

–31.3 dBc

•

Internally Input and Output Matched for Ease of Use

•

Integrated ESD Protection

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT

OFDM Output Power

•

Excellent Thermal Stability

•

Characterized with Series Equivalent Large–Signal Impedance Parameters

•

Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

(1)

Rating

Drain–Source Voltage

Gate–Source Voltage

Drain Current – Continuous

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

N–Channel Enhancement–Mode Lateral MOSFET

MRF377

MRF377R3

MRF377R5

470 – 860 MHz, 240 W, 32 V

LATERAL N–CHANNEL

RF POWER MOSFET

Freescale Semiconductor, Inc...

CASE 375G–04, STYLE 1

NI–860C3

Symbol

DSS

stg

Value

– 0.5, +15

486

2.78

– 65 to +150

200

Unit

Vdc

Adc

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

θJC

Max

0.36

Unit

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Human Body Model

Machine Model

Charge Device Model

(1) Each side of device measured separately.

NOTE –

CAUTION

– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Class

1 (Minimum)

M3 (Minimum)

7 (Minimum)

REV 0

MOTOROLA RF



Motorola, Inc. 2003

DEVICE DATA

For More Information On This Product,

Go to: www.freescale.com

MRF377 MRF377R3 MRF377R5

MRF377R5 Related Products

	MRF377R5	MRF377	MRF377R3
Description	RF POWER FIELD EFFECT TRANSISTOR	RF POWER FIELD EFFECT TRANSISTOR	RF POWER FIELD EFFECT TRANSISTOR
Is it Rohs certified?	conform to	conform to	conform to
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
Reach Compliance Code	unknow	unknow	unknow
Configuration	Single	Single	Single
Maximum drain current (Abs) (ID)	17 A	17 A	17 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C	200 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	486 W	486 W	486 W

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