SEMICONDUCTOR TECHNICAL DATA
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by MRF175LU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using single
ended circuits at frequencies to 400 MHz. The high power, high gain and
broadband performance of each device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.
•
Guaranteed Performance
MRF175LU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 100 Watts
Power Gain — 10 dB Typ
Efficiency — 55% Typ
MRF175LU
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER FETs
D
•
100% Ruggedness Tested At Rated Output Power
•
Low Thermal Resistance
•
Low C
rss
— 20 pF Typ @ V
DS
= 28 V
G
S
CASE 333–04, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
65
±40
13
270
1.54
–65 to +150
200
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.65
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 50 mA)
Zero Gate Voltage Drain Current
(V
DS
= 28 V, V
GS
= 0)
Gate–Body Leakage Current
(V
GS
= 20 V, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
2.5
1.0
Vdc
mAdc
µAdc
(continued)
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
1
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 100 mA)
Drain–Source On–Voltage (V
GS
= 10 V, I
D
= 5.0 A)
Forward Transconductance (V
DS
= 10 V, I
D
= 2.5 A)
V
GS(th)
V
DS(on)
g
fs
1.0
0.1
2.0
3.0
0.9
3.0
6.0
1.5
—
Vdc
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
Output Capacitance (V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance (V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
C
iss
C
oss
C
rss
—
—
—
180
200
20
—
—
—
pF
pF
pF
FUNCTIONAL CHARACTERISTICS — MRF175LU
(Figure 2)
Common Source Power Gain
(V
DD
= 28 Vdc, P
out
= 100 W, f = 400 MHz, I
DQ
= 100 mA)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 100 W, f = 400 MHz, I
DQ
= 100 mA)
Electrical Ruggedness
(V
DD
= 28 Vdc, P
out
= 100 W, f = 400 MHz, I
DQ
= 100 mA,
VSWR 30:1 at all Phase Angles)
G
ps
η
ψ
No Degradation in Output Power
8.0
50
10
55
—
—
dB
%
REV 9
2
C11
C12
L3
C13
C14
+v
BIAS
C9
.01
mf
R2
L2
R1
IN
C1
L1
Z2
Z3
C8
OUT
GND
Z1
C3
C4
C5
C6
C7
C2
D.U.T.
C1, C8 — 270 pF ATC Chip Cap
C2, C4, C6, C7 — 1.0–20 pF Trimmer Cap
C3 — 15 pF Mini Unelco Cap
C5 — 33 pF Mini Unelco Cap
C9, C12 — 0.1
µF
Ceramic Cap
C11, C14 — 680 pF Feed Thru Cap
C13 — 50
µF
Tantalum Cap
L1 — Hairpin Inductor #18 Wire
0.25″
0.4″
R1 — 10 k 1/4 W Resistor
R2 — 1 k 1/4 W Resistor
R3 — 1.5 k 1/4 W Resistor
Z1 — Microstrip Line 0.950″ x 0.250″
Z2 — Microstrip Line 1″ x 0.250″
Z3 — Microstrip Line 0.550″ x 0.250″
Board Material — 0.062″ Teflon —
fiberglass,
ε
r
= 2.56, 1 oz. copper
clad both sides
L2 — 12 Turns #18 Wire 0.450″ ID
L3 — Ferroxcube VK200 20/4B
Figure 2. 400 MHz Test Circuit
TYPICAL CHARACTERISTICS
4000
f T, UNITY GAIN FREQUENCY (MHz)
100
I D , DRAIN CURRENT (AMPS)
3000
V
DS
= 20 V
2000
10 V
10
1000
T
C
= 25°C
0
0
0
2
4
6
8
10
12
14
16
18
20
0
10
I
D
, DRAIN CURRENT (AMPS)
100
I
D
, DRAIN CURRENT (AMPS)
Figure 3. Common Source Unity Current Gain
Frequency versus Drain Current
Figure 4. DC Safe Operating Area
REV 9
3
TYPICAL CHARACTERISTICS
V GS, GATE SOURCE VOLTAGE (NORMALIZED)
5
I D , DRAIN CURRENT (AMPS)
4
3
2
1
0
TYPICAL DEVICE SHOWN, V
GS(th)
= 3 V
1.2
V
DD
= 28 V
1.1
I
D
= 4 A
V
DS
= 10 V
1
3A
2A
0.9
100 mA
0.8
-25
1
2
3
4
5
6
0
25
50
75
100
125
150
175
V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (°C)
Figure 5. Drain Current versus Gate Voltage
(Transfer Characteristics)
Figure 6. Gate–Source Voltage versus
Case Temperature
1000
500
C, CAPACITANCE (pF)
200
100
50
20
0
0
5
10
15
20
25
C
rss
C
oss
V
GS
= 0 V
f = 1 MHz
C
oss
C
iss
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance versus Drain–Source Voltage
REV 9
4
TYPICAL CHARACTERISTICS
MRF175LU
160
Pout , OUTPUT POWER (WATTS)
140
120
100
80
60
40
20
12
14
16
18
20
22
I
DQ
= 100 mA
f = 400 MHz
24
26
28
10 W
6W
P
in
= 14 W
I
SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
30
25
POWER GAIN (dB)
20
15
10
5
V
DS
= 28 V
I
DQ
= 100 mA
P
out
= 100 W
5
10
20
50
100
f, FREQUENCY (MHz)
200
500
160
Pout , OUTPUT POWER (WATTS)
140
f = 225 MHz
400 MHz
120
100
80
60
40
20
0
0
2
4
6
8
10
12
14
V
DD
= 28 V
I
DQ
= 100 mA
16
18
20
P
in
, INPUT POWER (WATTS)
Figure 10. Power Gain versus Frequency
Figure 11. Output Power versus Input Power
REV 9
5
Embedded System
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