UNISONIC TECHNOLOGIES CO., LTD
2SD1803
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC
2SD1803
applies to relay drivers, high-speed
inverters, converters, and other general high-current switching
applications.
NPN SILICON TRANSISTOR
FEATURES
*Low Collector-To-Emitter Saturation Voltage.
*High Current And High f
T
.
*Excellent Linearity Of h
FE
.
*Fast Switching Time.
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SD1803L-x-TM3-T
2SD1803G-x-TM3-T
TO-251
2SD1803L-x-TN3-R
2SD1803G-x-TN3-R
TO-252
2SD1803L-x-TN3-T
2SD1803G-x-TN3-T
TO-252
2SD1803L-x-K08-5060-R 2SD1803G-x-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: C: Collector B: Base
E: Emitter
1
B
B
B
E
2
C
C
C
E
Pin Assignment
3 4 5 6 7
E -
-
-
-
E -
-
-
-
E -
-
-
-
E B C C C
8
-
-
-
C
Packing
Tube
Tape Reel
Tube
Tape Reel
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QW-R209-014,F
2SD1803
PIN CONFIGURATION
NPN SILICON TRANSISTOR
DFN-8(5×6)
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2SD1803
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(T
A
= 25°C,
unless otherwise specified)
RATINGS
UNIT
60
V
50
V
6
V
DC
5
Collector Current
A
PULSE
8
T
A
=25°C
1
Power Dissipation
W
P
D
T
C
=25°C
20
°C
+150
Junction Temperature
T
J
°C
Storage Temperature
T
STG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
C
ob
t
ON
t
S
t
F
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
=1mA, R
BE
=∞
I
E
=10μA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=4A
I
C
=3A, I
B
=0.15A
I
C
=3A, I
B
=0.15A
V
CE
=5V, Ic=1A
V
CB
=10V, f=1MHz
See Test Circuit
See Test Circuit
See Test Circuit
MIN
60
50
6
TYP
MAX
UNIT
V
V
V
μA
μA
70
35
220
0.95
180
40
50
500
20
1
1
400
400
1.3
mV
V
MHz
pF
ns
ns
ns
CLASSIFICATION OF h
FE1
RANK
RANGE
Q
70 ~ 140
R
100 ~ 200
S
140 ~ 280
T
200 ~ 400
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QW-R209-014,F
2SD1803
TEST CIRCUIT
I
B
1
INPUT
R
B
I
B
2
50
V
R
+
100μ
PW=20μS
Duty Cycle≦1%
-5V
NPN SILICON TRANSISTOR
OUTPUT
R
L
+
470μ
25V
Ic=10I
B1
=-10I
B2
=2A
(Unit : (resistance :
Ω,
capacitance : F))
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QW-R209-014,F
2SD1803
■
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Ic -V
CE
5
30mA
4
35mA
40mA
50mA
45mA
4
20mA
15mA
2
10mA
5mA
I
B
=0
0
0.4
0.8
1.2
1.6
2.0
2
25mA
5
30mA
Ic -V
CE
25mA
20mA
3
3
15mA
10mA
5mA
1
0
1
0
0
2
4
6
I
B
=0
8
10
Collector to Emitter Voltage, V
CE
(V)
Ic -V
BE
6
5
4
3
2
1
0
V
CE
=2V
1000
7
5
3
2
100
7
5
3
Ta=-25 C
2
10
5 7 0.01
Collector to Emitter Voltage, V
CE
(V)
h
FE
-I c
C
V
CE
=2V
Ta=75 C
Ta=75 C
Ta=25 C
Ta=25 C
Ta=-25 C
0
0.2
0.4
0.6
0.8
1.0
1.2
2 3 5 7
0.1 2 3 5 71.0
2 3 5 7 10
Base to Emitter Voltage, V
BE
(V)
Collector Current, I
C
(A)
f
T
-I c
1000
7
5
V
CE
=5V
3
2
3
2
100
7
5
3
2
10
2 3 5 7 0.1
2 3
5 7
1.0
2 3
5 7
10
100
7
5
3
2
10
5 7 1.0
2
3
Cob -Vc
B
f=1MHz
5 7 10
2
3
5 7 100
Colletcor Current, Ic (A)
Colletcor to Base Voltage, V
CB
(V)
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QW-R209-014,F
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