FM120-M
DTA144EE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for
is available
Pb-Free package
overvoltage protection.
•
product for packing code
RoHS
Ultra high-speed switching.
suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for
environmental standards of
•
Lead-free parts meet
packing code suffix “H”
Epoxy
MIL-STD-19500
V-0 flammability rating
meets UL 94
/228
RoHS product for packing code suffix "G"
•
Moisure Sensitivity Level 1
Built-in
Halogen free product for packing code suffix "H"
of an inverter
bias resistors enable the configuration
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
0.146(3.7)
0.130(3.3)
Features
•
•
•
•
0.012(0.3) Typ.
SOT-523
0.071(1.8)
0.056(1.4)
V
CC
Supply voltage
---
-50
---
V
MAXIMUM RATINGS AND ELECTRICAL
10
CHARACTERISTICS
V
IN
Input voltage
-40
---
V
-30
I
O
Ratings at
Output
ambient temperature unless otherwise specified.
---
25℃
current
---
mA
I
C(MAX)
-100
Single phase half
dissipation
P
d
Power
wave, 60Hz, resistive of inductive load.
150
---
---
mW
For
j
capacitive load,
temperature
T
Junction
derate current by 20%
---
150
---
T
stg
Storage temperature
-55
---
150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
.004(0.10)MIN.
without connecting external input resistors
Mechanical data
•
The bias resistors consist of thin-film resistors with complete
•
Epoxy : UL94-V0 rated flame retardant
isolation to allow negative biasing of the input. They also have the
•
Case :
almost completely eliminating parasitic effects.
advantage of
Molded plastic, SOD-123H
,
•
Only
•
Terminals
conditions need to be set for operation, making
the on/off
:Plated terminals, solderable per MIL-STD-750
Method 2026
device design easy
•
Polarity : Indicated by cathode band
•
maximum ratings
Absolute
Mounting Position : Any
@ 25
Symbol
•
Weight : Approximated 0.011 gram
Parameter
Min
Typ
Max
Unit
circuit
.035(0.90)
.028(0.70)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.014(0.35)
.010(0.25)
Dimensions in inches and (millimeters)
.043(1.10)
.035(0.90)
Marking Code
Maximum Recurrent Peak Reverse
Electrical Characteristics
Voltage
@ 25
V
RRM
V
RMS
Min
V
DC
-0.5
---
I
O
---
---
I
FSM
---
68
R
ΘJA
32.9
C
J
0.8
T
---
J
TSTG
12
20
14
Typ
---
20
---
---
---
---
---
47
1.0
250
13
30
14
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
.069(1.75)
.057(1.45)
10
100
70
115
150
105
150
120
200
140
200
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.014(0.35)
.006(0.15)
0.85
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.035(0.90)
.028(0.70)
Maximum RMS Voltage
Symbol
Parameter
Maximum DC Blocking Voltage
=-5V, I
O
=-100A)
V
I(off)
Input voltage (V
CC
V
I(on)
(V
O
=-0.3V, I
O
=-2mA)
Maximum Average Forward Rectified Current
V
O(on)
Output voltage (I
O
/I
I
-10mA/-0.5mA
=
I
=
ms single half sine-wave
Peak
I
Forward
Input current (V
I
-5V)
Surge Current 8.3
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
superimposed on rated load (JEDEC method)
G
I
DC current gain (V
O
=-5V, I
O
-5mA)
=
Typical Thermal Resistance (Note 2)
R
1
Input resistance
Typical Junction Capacitance (Note 1)
R
2
/R
1
Resistance ratio
Transition
Range
Operating Temperature
frequency
f
T
(V
O
=-10V, I
O
=5mA, f=100MHz)
Storage Temperature Range
21
28
Max
Unit
---
30
V
40
V
-3.0
-0.3
V
-0.18
mA
A
-0.5
---
61.1
K¡
1.2
-55 to +125
---
MHz
.008(0.20)
100
80
.004(0.10)
40
.004(0.10)MAX.
120
-55 to +150
V
F
@T A=125℃
0.50
0.70
0.5
10
0.9
0.92
*Marking: 16
I
R
Dimensions in inches and (millimeters)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
FM120-M
DTA144EE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
京公网安备 11010802033920号
EEWORLD
