Ordering number : ENA1907A
BMS3003
SANYO Semiconductors
DATA SHEET
BMS3003
Features
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ON-resistance RDS(on)1=5.0m
Ω
(typ.)
Input capacitance Ciss=13200pF (typ.)
4V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--60
±20
--78
--312
2.0
40
150
--55 to +150
420
--60
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=--36V, L=100
μ
H, IAV=-
-60A (Fig.1)
*2
L
≤
100
μ
H, Single pulse
Package Dimensions
unit : mm (typ.)
7529-001
10.16
3.18
3.3
4.7
2.54
Product & Package Information
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
BMS3003-1E
Marking
Electrical Connection
2
15.87
6.68
A
15.8
3.23
MS3003
LOT No.
1
2.76
1.47 MAX
0.8
1
2
3
12.98
3
DETAIL-A
(0.84)
0.5
FRAME
EMC
( 1.0)
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3SG
2.54
2.54
http://www.sanyosemi.com/en/network/
91212 TKIM TC-00002812/D2210QA TKIM TC-00002546 No. A1907-1/7
BMS3003
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=--78A, VGS=0V
See Fig.3
IS=--78A, VGS=0V, di/dt=--100A/μs
VDS=--36V, VGS=--10V, ID=--78A
See Fig.2
VDS=--20V, f=1MHz
Conditions
-1mA,
VGS=0V
ID=-
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
-10V,
ID=-
-1mA
VDS=-
-10V,
ID=--39A
VDS=-
-10V
ID=--39A, VGS=-
-4V
ID=--39A, VGS=-
Ratings
min.
--60
--10
±10
--1.2
130
5.0
6.5
13200
1300
950
90
360
1200
680
285
35
70
-
-0.95
150
470
-
-1.5
6.5
9.0
-
-2.6
typ.
max.
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Unclamped Inductive Switching Test Circuit
D
≥50Ω
RG
G
BMS3003
0V
--10V
50Ω
S
VDD
L
Fig.2 Switching Time Test Circuit
0V
--10V
VIN
VDD= --36V
VIN
PW=10μs
D.C.≤1%
G
D
ID= --39A
RL=0.92Ω
VOUT
P.G
BMS3003
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BMS3003
D
L
G
S
VDD
Driver MOSFET
Ordering Information
Device
BMS3003-1E
Package
TO-220F-3SG
Shipping
50pcs./magazine
memo
Pb Free
No. A1907-2/7
BMS3003
--160
--140
--120
--100
--80
--60
--40
ID -- VDS
--8
V
--6
V
Tc=25°C
--160
ID -- VGS
Tc= --2
5
°
C
--1.5
--2.0
--2.5
V
--4
Drain Current, ID -- A
--140
--120
--100
--80
--60
--40
--20
0
Drain Current, ID -- A
--1
0
--20
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
--0.5
--1.0
25
°
C
VGS= --3V
Tc=7
5
°
C
--25
°
C
--3.0
--3.5
--4.0
25
°
C
--4.5
V
75
°
C
VDS= --10V
--5.0
Drain-to-Source Voltage, VDS -- V
16
RDS(on) -- VGS
IT16239
16
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT16240
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
14
12
10
8
6
4
2
0
0
ID= --39A
Single pulse
Single pulse
14
12
10
8
6
4
2
0
--50
Tc=75
°
C
25
°
C
--25
°
C
--39A
I
D=
V,
--39A
= --4
I
D=
VGS
,
--10V
S=
VG
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
|
y
fs
|
-- ID
IT16241
--1000
7
5
3
2
Case Temperature, Tc --
°
C
IS -- VSD
IT16242
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS= --10V
VGS=0V
Single pulse
25
°
C
Source Current, IS -- A
--100
7
5
3
2
--10
7
5
3
2
5 7 --100
IT16243
--0.1
7
5
3
2
--0.01
0
--0.2
--0.4
Tc=
75
°
C
25
°
C
--0.6
--25
°
C
--0.8
5
°
C
--2
=
Tc
C
75
°
--1.0
7
5
3
2
--1.0
--1.2
--1.4
Drain Current, ID -- A
10000
7
5
SW Time -- ID
VDD= --36V
VGS= --10V
td(off)
100000
7
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
IT16244
f=1MHz
Switching Time, SW Time -- ns
3
2
1000
7
5
3
2
100
7
5
3
2
10
--0.1
2
3
5 7 --1.0
tf
tr
Ciss, Coss, Crss -- pF
Ciss
10000
7
5
3
2
1000
7
5
Coss
td(on)
Crss
3
2
2
3
5 7 --10
2
3
5 7 --100
IT16245
100
0
--5
--10
--15
--20
--25
--30
IT16246
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No. A1907-3/7
BMS3003
--10
--9
VGS -- Qg
VDS= --36V
ID= --78A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
50
100
150
200
250
300
IT16247
--1000
7
5
3
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
ASO
IDP= --312A (PW≤10μs)
ID= --78A
Operation in
this area is
limited by RDS(on).
1m
s
10
10
ms
0m
DC
s
op
era
tio
n
10
0
μ
s
10
μ
s
--0.1
--0.1
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
Drain-to-Source Voltage, VDS -- V
45
PD -- Tc
5 7 --100
IT16248
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
0
20
40
60
80
100
120
140
160
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
2.0
1.5
1.0
0.5
0
Ambient Temperature, Ta --
°C
120
EAS -- Ta
IT16249
Case Temperature, Tc --
°C
IT16250
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT16251
No. A1907-4/7
BMS3003
Magazine Specification
BMS3003-1E
No. A1907-5/7
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