Ordering number : ENA1011A
ECH8655R
SANYO Semiconductors
DATA SHEET
ECH8655R
Features
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
•
•
•
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
1unit
When mounted on ceramic substrate (900mm
×0.8mm)
2
2
Conditions
Ratings
24
±12
9
60
1.4
1.5
150
-
-55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-003
ECH8655R-TL-H
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Top View
0.25
2.9
0.15
Packing Type : TL
5
0 to 0.02
Marking
8
TA
TL
2.8
2.3
Lot No.
0.25
1
0.65
4
0.3
Electrical Connection
8
7
6
5
0.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Bottom View
0.07
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
51612 TKIM/40908PE TIIM TC-00001311 No. A1011-1/7
ECH8655R
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=9A, VGS=0V
VDS=10V, VGS=10V, ID=9A
See specified Test Circuit.
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4.5A
ID=4.5A, VGS=4.5V
ID=4.5A, VGS=4.0V
ID=4.5A, VGS=3.1V
ID=2A, VGS=2.5V
0.5
4.8
9
9
9.2
10.5
8
13
13.5
15
18
320
1100
2400
2100
16.8
1.6
4.8
0.8
1.2
17
18
21
25.5
Ratings
min
24
1
±10
1.3
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
ns
ns
ns
ns
nC
nC
nC
V
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Switching Time Test Circuit
4.5V
0V
VIN
VDD=10V
VIN
PW=10μs
D.C.≤1%
G
Rg
D
ID=4.5A
RL=2.22Ω
VOUT
P.G
50Ω
S
ECH8655R
Rg=1kΩ
Ordering Information
Device
ECH8655R-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1011-2/7
ECH8655R
9
ID -- VDS
3.1V
9
8
7
ID -- VGS
VDS=10V
8
7
Drain Current, ID -- A
4.5V
4.0V
2 .5
V
6
5
4
3
2
1
0
0
1.5V
Drain Current, ID -- A
6
5
4
3
2
1
VGS=1.0V
0.1
0.2
0.3
0.4
0.5
IT13155
0
0
0.5
1.0
1.5
2.0
IT13156
Drain-to-Source Voltage, VDS -- V
40
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
35
RDS(on) -- Ta
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- m
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- m
Ω
35
30
25
20
15
10
5
0
0
2
4
6
8
10
IT13157
30
25
20
ID=2.0A
4.5A
15
10
=2A
V, I D
4.5A
2.5
=
, ID
S=
VG
.1V
A
=3
=4.5
V GS
, ID
V
=4.5
VGS
.5A
I =4
4.0V, D
V GS=
5
0
--50
0
50
100
25
°
C
--25
°
C
150
Ta=
75
°
C
200
IT13158
Gate-to-Source Voltage, VGS -- V
10
|
y
fs
|
-- ID
Ambient Temperature, Ta --
°
C
10
7
5
3
2
IS -- VSD
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS=10V
7
5
=
Ta
3
--
°
C
25
25
°
C
75
2
0.01
7
5
3
2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.0
0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
7
5
10
IT13159
7
0.001
0.1
SW Time -- ID
td (off)
Diode Forward Voltage, VSD -- V
10
Ta=
7
5
°
C
25
°
C
--25
°
C
°
C
Source Current, IS -- A
1.0
7
5
3
2
0.1
7
5
3
2
IT13160
VGS -- Qg
3
2
Gate-to-Source Voltage, VGS -- V
VDD=10V
VGS=4V
VDS=10V
ID=9A
8
Switching Time, SW Time -- ns
tf
6
1000
7
5
tr
4
td(on)
3
2
2
100
0.1
0
2
3
5
7
1.0
2
3
5
7
10
0
2
4
6
8
10
12
14
16
18
20
Drain Current, ID -- A
IT13236
Total Gate Charge, Qg -- nC
IT13237
No. A1011-3/7
ECH8655R
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
Allowable Power Dissipation, PD -- W
1.8
PD -- Ta
When mounted on ceramic substrate
(900mm
2
✕0.8mm)
IDP=60A
ID=9A
PW
≤
10
μs
0
μ
1m
s
s
10
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Drain Current, ID -- A
DC
Operation in this
area is limited by RDS(on).
10
ms
10
0m
s
To
t
al
op
Di
era
tio
n
1u
ni
t
ss
ip
ati
on
0.1
7
Ta=25
°
C
5
Single pulse
3
When mounted on ceramic substrate
2
(900mm
2
✕0.8mm)
1unit
0.01
2 3 5 7 1.0
2 3
0.01 2 3 5 7 0.1
5 7 10
2 3
5
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
IT13391
Ambient Temperature, Ta --
°
C
IT13154
No. A1011-4/7
ECH8655R
Embossed Taping Specification
ECH8655R-TL-H
No. A1011-5/7
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