BF 1012
Silicon N-Channel MOSFET Tetrode
•
For low noise, high gain controlled
input stages up to 1GHz
•
Operating voltage 12V
•
Integrated stabilized bias network
3
4
2
1
VPS05178
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BF 1012
Marking Ordering Code Pin Configuration
MYs
Q62702-F1487 1 = S
2=D
Package
3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation,
T
S
≤
76 °C
Storage temperature
Channel temperature
Symbol
Value
16
25
10
3
200
-55 ...+150
150
V
mW
°C
Unit
V
mA
V
DS
I
D
±
I
G1/2SM
+
V
G1SE
P
tot
T
stg
T
ch
Thermal Resistance
Channel - soldering point
R
thchs
≤370
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group
Semiconductor Group
1
1
Sep-09-1998
1998-11-01
BF 1012
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
DC characteristics
Drain-source breakdown voltage
typ.
-
-
-
-
-
-
10
0.9
max.
-
12
16
60
50
500
-
-
Unit
V
(BR)DS
±
V
(BR)G1SS
±
V
(BR)G2SS
+I
G1SS
±
I
G2SS
16
8
10
-
-
-
8
-
V
I
D
= 300 µA, -V
G1S
= 4 V, -
V
G2S
= 4 V
Gate 1 source breakdown voltage
±
I
G1S
= 10 mA,
V
G2S
=
V
DS
= 0
Gate 2 source breakdown voltage
±
I
G2S
= 10 mA,
V
G1S
= 0 V,
V
DS
= 0 V
Gate 1 source current
µA
nA
µA
mA
V
V
G1S
= 6 V,
V
G2S
= 0 V
Gate 2 source leakage current
±
V
G2S
= 8 V,
V
G1S
= 0 V,
V
DS
= 0 V
Drain current
I
DSS
I
DSO
V
G2S(p)
V
DS
= 12 V,
V
G1S
= 0 ,
V
G2S
= 6 V
Operating current (selfbiased)
V
DS
= 12 V,
V
G2S
= 6 V
Gate 2-source pinch-off voltage
V
DS
= 12 V,
I
D
= 100 µA
AC characteristics
Forward transconductance (self biased)
g
fs
C
g1ss
C
dss
G
ps
F
800
∆
G
ps
-
-
-
-
-
40
24
2.1
0.9
22
1.4
50
-
2.5
-
-
-
-
mS
pF
V
DS
= 12 V,
V
G2S
= 6 V,
f
= 1 kHz
Gate 1-input capacitance (self biased)
V
DS
= 12 V,
V
G2S
= 6 V,
f
= 1 MHz
Output capacitance (self biased)
V
DS
= 12 V,
V
G2S
= 6 ,
f
= 1 MHz
Power gain (self biased)
dB
V
DS
= 12 V,
V
G2S
= 6 ,
f
= 800 MHz
Noise figure (self biased)
V
DS
= 12 V,
V
G2S
= 6 V,
f
= 800 MHz
Gain control range (self biased)
V
DS
= 12 V,
V
G2S
= 6 V,
f
= 800 MHz
Semiconductor Group
Semiconductor Group
2
2
Sep-09-1998
1998-11-01
京公网安备 11010802033920号
EEWORLD
