VSSA210
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•
Halogen-free according to IEC 61249-2-21 definition
100V
2.0A
Mechanical Data
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
I
F
I
F
(1)
(2)
SYMBOL
VSSA210
V2B
100
2.0
UNIT
V
A
1.7
60
- 40 to + 150
A
°C
I
FSM
T
J
, T
STG
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
Instantaneous forward voltage
TEST CONDITIONS
I
R
= 1.0 mA
I
F
= 2.0 A
T
A
= 25 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
C
J
I
R
(2)
SYMBOL
V
BR
V
F
(1)
TYP.
100 (minimum)
0.61
0.56
1.0
0.95
3.5
2.2
175
MAX.
-
0.70
0.65
-
-
150
15
-
UNIT
V
μA
mA
μA
mA
pF
V
R
= 70 V
Reverse current
V
R
= 100 V
Typical junction capacitance
4.0 V, 1 MHz
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
R
JM
(1)
(2)
VSSA210
135
UNIT
°C/W
25
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R
JA
- junction to ambient
(2)
Units mounted on PCB with 8 mm x 8 mm copper pad areas; R
JM
- junction to mount
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com
VSSA210
Surface Mount Trench MOS Barrier Schottky Rectifier
RATINGS AND CHARACTERISTIC CURVES
3.5
2.0
1.8
100V
2.0A
VSSA210
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
D = 0.8
Average Forward Rectified Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
T
M
Measured at Terminal
Average Power Loss (W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.4
0.8
T
D = t
p
/T
1.2
1.6
2.0
2.4
2.8
t
p
3.2
3.6
T
M
- Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
100
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
Instantaneous Forward Current (A)
10
T
A
= 150 °C
T
A
= 125 °C
1
Junction Capacitance (pF)
T
A
= 100 °C
100
T
A
= 25 °C
0.1
0.1
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
10
T
A
= 150 °C
T
A
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Ambient
100
1
T
A
= 100 °C
0.1
10
0.01
T
A
= 25 °C
0.001
20
40
60
80
100
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
E-mail: sales@taychipst.com
2 of 2
Web Site: www.taychipst.com
Embedded System
京公网安备 11010802033920号
EEWORLD
