TC7WH240FU/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7WH240FU,TC7WH240FK
Dual Bus Buffer Inverted, 3-State Outputs
Features
•
•
•
•
•
•
•
High speed: t
pd
= 3.6ns (typ.) at V
CC
= 5V, C
L
= 15pF
Low power dissipation: I
CC
= 2
μA
(max) at Ta = 25°C
High noise immunity: V
NIH
= V
NIL
= 28% V
CC
(min)
5.5V Tolerant inputs.
Balanced propagation delays: t
pLH
≈
t
pHL
Wide operating voltage range: V
CC
= 2 to 5.5 V
Low Noise : V
OLP
= 0.8 V (max)
TC7WH240FK
TC7WH240FU
(SM8)
Marking
SM8
Product Name
US8
H240
Lot No.
WH
240
Weight
SSOP8-P-0.65: 0.02 g (typ.)
SSOP8-P-0.50A: 0.01 g (typ.)
(US8)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Lead temperature (10 s)
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
T
L
Rating
−0.5
to 7.0
−0.5
to 7.0
−0.5
to V
CC
+
0.5
−20
±20
(Note 1)
±25
±50
300 (SM8)
200 (US8)
−65
to 150
260
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
1
G1
2
A1
3
Y2
4
GND
Pin Assignment
(top view)
V
CC
8
G2
7
Y1
6
A2
5
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V
OUT
< GND, V
OUT
> V
CC
1
2009-09-28
TC7WH240FU/FK
AC Characteristics
(特に指定がない場合、Input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
3.3
±
0.3
C
L
(pF)
15
50
15
50
15
50
15
50
50
50
50
50
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(Note 3)
⎯
Ta
=
25°C
Typ.
5.3
7.8
3.6
5.1
6.6
9.1
4.7
6.2
10.3
6.7
⎯
⎯
4
6
17
Max
7.5
11.0
5.5
7.5
10.6
14.1
7.3
9.3
14.0
9.2
1.5
1.0
10
⎯
⎯
Ta
= −40~85°C
Min
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
⎯
⎯
⎯
⎯
⎯
Max
9.0
12.5
6.5
8.5
12.5
16.0
8.5
10.5
16.0
10.5
1.5
1.0
10
⎯
⎯
ns
ns
ns
Unit
Propagation Delay Time
t
pLH
t
pHL
5.0
±
0.5
3-State Output
Enable Time
t
pZL
t
pZH
3.3
±
0.3
R
L
=
1kΩ
5.0
±
0.5
3.3
±
0.3
5.0
±
0.5
3.3
±
0.3
5.0
±
0.5
3-State Output
Disable Time
Output to Output
Skew
Input Capacitance
Output Capacitance
Power Dissipation
Capacitance
t
pLZ
t
pHZ
tos
LH
tos
HL
C
IN
C
I/O
C
PD
R
L
=
1kΩ
(Note 2)
ns
pF
pF
pF
Note 2: Parameter guaranteed by design.
tosLH = |tpLHm - tpLHn|, tosHL = |tpHLm - tpHLn|
Note 3: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation :
I
CC (opr)
= C
PD
½V
CC
½f
IN
I
CC
/2
Noise Characteristics (Ta = 25°C, input: t
r
= t
f
= 3 ns)
Characteristics
Quiet output maximum dynamic V
OL
Quiet output minimum dynamic V
OL
Minimum high level dynamic input
voltage
Maximum low level dynamic input
voltage
Symbol
V
OLP
V
OLV
V
IHD
V
ILD
Test Condition
C
L
=
50 pF
C
L
=
50 pF
C
L
=
50 pF
C
L
=
50 pF
V
CC
(V)
5.0
5.0
5.0
5.0
Typ.
0.5
−0.5
⎯
⎯
Limit
0.8
−0.8
3.5
1.5
Unit
V
V
V
V
Input Equivalent Circuit
4
2009-09-28
Microcontroller MCU
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