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EFM102

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size3MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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EFM102 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC

EFM102 Parametric

Parameter NameAttribute value
Number of components1
Number of terminals2
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
each_compliYes
EU RoHS regulationsYes
stateActive
Diode typeRECTIFIER DIODE
structureSINGLE
Diode component materialsSILICON
Maximum forward voltage0.9500 V
jedec_95_codeDO-214AC
jesd_30_codeR-PDSO-C2
jesd_609_codee3
moisture_sensitivity_levelNOT SPECIFIED
Maximum non-repetitive peak forward current30 A
Minimum operating temperature-55 Cel
Maximum operating temperature150 Cel
Maximum output current1 A
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_265
qualification_statusCOMMERCIAL
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.0350 µs
sub_categoryRectifier Diodes
surface mountYES
terminal coatingMATTE TIN
Terminal formC BEND
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
dditional_featureMETALLURGICALLY BONDED
EFM101 THRU EFM107
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER
FEATURES
*
*
*
*
*
*
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.057 gram
50V-600V
1.0A
Mechanical Data
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
(@ T
A
=25
O
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 55
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 4)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS(@T
A
=25
O
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Reverse Re covery Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
4. Thermal Resistance : Mounted on PCB.
@T
A
= 25
o
C
@T
A
= 100
o
C
SYMBOL
V
F
I
R
trr
35
EFM101 EFM102 EFM103 EFM104 EFM105 EFM106 EFM107 UNITS
0.95
5.0
100
50
1.25
1.50
Volts
mAmps
nSec
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
qJA
R
qJL
C
J
T
J
, T
STG
15
-55 to + 150
EFM101 EFM102 EFM103 EFM104 EFM105 EFM106 EFM107 UNITS
50
35
50
100
70
100
150
105
150
200
140
200
1.0
30
85
35
10
300
210
300
400
280
400
600
420
600
Volts
Volts
Volts
Amps
Amps
0
C/W
pF
0
C
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

EFM102 Related Products

EFM102 EFM101 EFM103 EFM104 EFM105 EFM106 EFM107
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Number of components 1 1 1 1 1 1 -
Number of terminals 2 2 2 2 2 2 -
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 -
each_compli Yes Yes Yes Yes Yes Yes -
EU RoHS regulations Yes Yes Yes Yes Yes Yes -
state Active Active Active Active Active Active -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
structure SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON -
Maximum forward voltage 0.9500 V 0.9500 V 0.9500 V 0.9500 V 0.9500 V 0.9500 V -
jedec_95_code DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC -
jesd_30_code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 -
jesd_609_code e3 e3 e3 e3 e3 e3 -
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A 30 A -
Minimum operating temperature -55 Cel -55 Cel -55 Cel -55 Cel -55 Cel -55 Cel -
Maximum operating temperature 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel -
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A -
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
eak_reflow_temperature__cel_ 265 265 265 265 265 265 -
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL -
Maximum repetitive peak reverse voltage 200 V 200 V 200 V 200 V 200 V 200 V -
Maximum reverse recovery time 0.0350 µs 0.0350 µs 0.0350 µs 0.0350 µs 0.0350 µs 0.0350 µs -
sub_category Rectifier Diodes Rectifier Diodes Rectifier Diodes Rectifier Diodes Rectifier Diodes Rectifier Diodes -
surface mount YES YES YES YES YES YES -
terminal coating MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN -
Terminal form C BEND C BEND C BEND C BEND C BEND C BEND -
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL -
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
dditional_feature METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED -

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