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BLD101D

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size59KB,3 Pages
ManufacturerShenzhen SI Semiconductors Co., Ltd.
Download Datasheet Parametric View All

BLD101D Overview

Transistor

BLD101D Parametric

Parameter NameAttribute value
MakerShenzhen SI Semiconductors Co., Ltd.
package instruction,
Reach Compliance Codeunknown
Shenzhen SI Semiconductors Co., LTD.
Product Specification
BLD
/BLD SERIES TRANSISTORS
RoHS
BLD101D
RoHS COMPLIANT
FEATURES
HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
WIDE SOA
APPLICATION:
FLUORESCENT LAMP
ELECTRONIC BALLAST
Tc=25°C
°
Absolute Maximum Ratings Tc=25°C
°
PARAMETER
-
Collector-Base Voltage
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
VALUE
500
400
9
0.3
7
150
-65-150
TO-92
UNIT
V
V
V
A
W
°C
°C
Tc=25°C
°
Electronic Characteristics
CHARACTERISTICS
-
Collector-Base Cutoff Current
-
Collector-Emitter Cutoff Current
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
-
Collector-Emitter Saturation Voltage
-
Base-Emitter Saturation Voltage
Tc=25°C
°
SYMBOL
I
CBO
I
CEO
V
CEO
V
EBO
Vcesat
Vbesat
TEST CONDITION
V
CB
=500V
V
CE
=400V,I
B
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
I
C
=0.05A, ,I
B
=0.01A
I
C
=200mA,I
B
=50mA
I
C
=50mA,I
B
=10mA
V
CE
=5V,I
C
=1mA
7
10
5
1.0
2.0
µS
0.8
1.9
V
40
400
9
0.30
V
0.50
1.1
V
MIN
MAX
100
250
UNIT
A
A
V
V
DC Current Gain
h
FE
V
CE
=20V,I
C
=20mA
V
CE
=5V,I
C
=250mA
Storage Time
Falling Time
Diode Forward Voltage
t
S
t
f
Vf
V
CC
=5V,I
C
=0.1A
(UI9600)
I
F
=0.15A
Si semiconductors
2011.03
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