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NTP5860N

Description
220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size119KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NTP5860N Overview

220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET

NTP5860N Parametric

Parameter NameAttribute value
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codeCASE 418B-04
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)800 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)103 A
Maximum drain-source on-resistance0.003 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)520 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
NTB5860N, NTP5860N,
NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
http://onsemi.com
V
(BR)DSS
60 V
R
DS(on)
MAX
3.0 mW @ 10 V
I
D
MAX
220 A
Low R
DS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
D
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Continuous Drain
Current, R
qJC
Power Dissipation,
R
qJC
Pulsed Drain Current
Current Limited by Package
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
I
DMmax
T
J
, T
stg
I
S
E
AS
T
L
Symbol
V
DSS
V
GS
I
D
Value
60
$20
220
156
283
660
130
−55
to
+175
130
735
260
W
Unit
V
V
A
G
S
N−CHANNEL MOSFET
4
4
1
A
A
°C
A
mJ
°C
1
2
3
TO−220AB
CASE 221A
STYLE 5
2
3
D
2
PAK
CASE 418B
STYLE 2
t
p
= 10
ms
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient
Steady State (Note 1)
Symbol
R
qJC
R
qJA
Max
0.53
28
Unit
°C/W
1
Gate
2
Drain
NTP
5860NG
AYWW
3
Source
1
Gate
NTB
5860NG
AYWW
2
Drain
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
G = Pb−Free Device
A
= Assembly Location*
Y
= Year
WW = Work Week
*Could be one or two digit alpha or numeric code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
September, 2012
Rev. 2
1
Publication Order Number:
NTB5860N/D

NTP5860N Related Products

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Description 220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
Number of terminals 3 2 2 2
surface mount NO Yes YES Yes
Terminal form THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON SILICON
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