NTB5860N, NTP5860N,
NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
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V
(BR)DSS
60 V
R
DS(on)
MAX
3.0 mW @ 10 V
I
D
MAX
220 A
•
•
•
•
•
Low R
DS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
D
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Continuous Drain
Current, R
qJC
Power Dissipation,
R
qJC
Pulsed Drain Current
Current Limited by Package
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
I
DMmax
T
J
, T
stg
I
S
E
AS
T
L
Symbol
V
DSS
V
GS
I
D
Value
60
$20
220
156
283
660
130
−55
to
+175
130
735
260
W
Unit
V
V
A
G
S
N−CHANNEL MOSFET
4
4
1
A
A
°C
A
mJ
°C
1
2
3
TO−220AB
CASE 221A
STYLE 5
2
3
D
2
PAK
CASE 418B
STYLE 2
t
p
= 10
ms
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient
−
Steady State (Note 1)
Symbol
R
qJC
R
qJA
Max
0.53
28
Unit
°C/W
1
Gate
2
Drain
NTP
5860NG
AYWW
3
Source
1
Gate
NTB
5860NG
AYWW
2
Drain
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
G = Pb−Free Device
A
= Assembly Location*
Y
= Year
WW = Work Week
*Could be one or two digit alpha or numeric code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
September, 2012
−
Rev. 2
1
Publication Order Number:
NTB5860N/D
NTB5860N, NTP5860N, NVB5860N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C Unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(th)
V
GS(th)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
t
a
t
b
Q
RR
V
GS
= 0 V, I
S
= 65 A,
dI
S
/dt = 100 A/ms
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 65 A, R
G
= 2.5
W
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 65 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
V
GS
= 10 V, I
D
= 75 A
V
DS
= 15 V, I
D
= 30 A
V
DS
= 0 V, I
D
= 250
mA
I
D
= 250
mA
V
GS
= 0 V
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
60
5.0
1.0
100
$100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
V
DS
= 0 V, V
GS
=
$20
V
V
GS
= V
DS
, I
D
= 250
mA
2.0
−10.1
2.5
38
4.0
V
mV/°C
3.0
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
10760
1125
700
180
11
45
57
nC
pF
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V
I
S
= 20 A
0.76
0.63
55
29
26
76
nC
ns
1.1
V
dc
27
117
66
150
ns
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTB5860N, NTP5860N, NVB5860N
TYPICAL CHARACTERISTICS
350
I
D
, DRAIN CURRENT (A)
300
250
200
150
100
50
0
4.5 V
0
1
2
3
4
5
5.0 V
350
300
I
D
, DRAIN CURRENT (A)
5.5 V
250
200
150
100
50
0
2
3
T
J
= 25°C
V
DS
≥
10 V
V
GS
=
10 V
V
GS
= 6 V
T
J
= 25°C
T
J
= 125°C
4
T
J
=
−55°C
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.008
I
D
= 20 A
T
J
= 25°C
0.0035
T
J
= 25°C
0.006
0.0030
V
GS
= 10 V
0.004
0.0025
0.002
0.0020
0.000
4
6
8
10
0.0020
10
30
50
70
90
110
130
150
170
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 4. On−Resistance vs. Drain Current
2.0
I
D
= 20 A
1.8 V = 10 V
GS
100000
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
1.6
1.4
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10000
T
J
= 125°C
175
1000
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
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3
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
NTB5860N, NTP5860N, NVB5860N
TYPICAL CHARACTERISTICS
14000
12000
C, CAPACITANCE (pF)
10000
8000
6000
4000
2000
0
0
C
rss
10
20
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
GS
= 0 V
T
J
= 25°C
Q
T
8
6
4
2
0
0
20
Q
gs
Q
gd
V
DS
= 48 V
I
D
= 65 A
T
J
= 25°C
40
60
80
100 120 140
Q
g
, TOTAL GATE CHARGE (nC)
160 180
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 48 V
I
D
= 65 A
V
GS
= 10 V
t, TIME (ns)
t
f
100
t
r
t
d(off)
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (W)
100
180
160
140
120
100
80
60
40
20
0
0.60
0.70
0.80
0.90
1.00
1.10
V
GS
= 0 V
T
J
= 25°C
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
Figure 10. Diode Forward Voltage vs. Current
1 ms
10 ms
dc
100
ms
10
ms
I
D
, DRAIN CURRENT (A)
100
10
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
1
0.1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
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4
NTB5860N, NTP5860N, NVB5860N
TYPICAL CHARACTERISTICS
1
R
qJC(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Duty Cycle = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
0.01
0.001
0.000001
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Device
NTP5860NG
NTB5860NT4G
NVB5860NT4G*
Package
TO−220AB
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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