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NVB5860N

Description
220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size119KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NVB5860N Overview

220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET

NVB5860N Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage60 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT,CASE 418B-04, D2PAK-3/2
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current220 A
Rated avalanche energy735 mJ
Maximum drain on-resistance0.0030 ohm
Maximum leakage current pulse660 A
NTB5860N, NTP5860N,
NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
http://onsemi.com
V
(BR)DSS
60 V
R
DS(on)
MAX
3.0 mW @ 10 V
I
D
MAX
220 A
Low R
DS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
D
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Continuous Drain
Current, R
qJC
Power Dissipation,
R
qJC
Pulsed Drain Current
Current Limited by Package
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
I
DMmax
T
J
, T
stg
I
S
E
AS
T
L
Symbol
V
DSS
V
GS
I
D
Value
60
$20
220
156
283
660
130
−55
to
+175
130
735
260
W
Unit
V
V
A
G
S
N−CHANNEL MOSFET
4
4
1
A
A
°C
A
mJ
°C
1
2
3
TO−220AB
CASE 221A
STYLE 5
2
3
D
2
PAK
CASE 418B
STYLE 2
t
p
= 10
ms
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient
Steady State (Note 1)
Symbol
R
qJC
R
qJA
Max
0.53
28
Unit
°C/W
1
Gate
2
Drain
NTP
5860NG
AYWW
3
Source
1
Gate
NTB
5860NG
AYWW
2
Drain
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
G = Pb−Free Device
A
= Assembly Location*
Y
= Year
WW = Work Week
*Could be one or two digit alpha or numeric code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
September, 2012
Rev. 2
1
Publication Order Number:
NTB5860N/D

NVB5860N Related Products

NVB5860N NTB5860N NTB5860NT4G NTP5860N
Description 220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 220 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 2 2 2 3
surface mount Yes Yes YES NO
Terminal form GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
Transistor component materials SILICON SILICON SILICON SILICON
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