MMA-022025B
2 - 20 GHz GaAs MMIC
Power Amplifier
Data Sheet
March 2007
Features:
•
•
•
•
•
•
•
•
•
Usable Frequency Range: 1 - 22 GHz
P1dB: +27 dBm
Gain: 7.5 dB
Fully Matched Input/Output
On-Chip DC Bias RF Choke
On-Chip Input/Output DC Blocking
Die Size: 2.85 x 1.24 x 0.1 mm
Robust 0.25um pHEMT Technology
MTTF > 1.0E6 hours @ +85
°C
Ambient
Description:
The MMA-022025B is a 2 - 20GHz broadband amplifier with typical 27dBm output power at 1 dB compression point. The
MMIC chip is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1
– 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias
circuits and RF connections for broad range applications.
Electrical Specifications:
Parameter
Frequency Range
Small Signal Gain
Gain Flatness
Input Return Loss
Output Return Loss
Output P1dB
DC Drain Voltage, VDD
DC Gate VGG (~ 1mA)
DC Current, IDD
Thermal Resistance
(At VDD = + 8.0V, IDD = 290 mA, VGG = - 0.40V, T
A
=25
°C
)
Units
GHz
dB
+/-dB
dB
dB
dBm
V
V
mA
°C/W
Min.
2
6.5
Typ.
7.5
1.2
-10
-10
+27
+8.0
-0.4
290
32
Max.
20
-7.5
-8
+9.5
0.0
350
+26
-2.0
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Updated 5/29/2007, Page 1 of 4
MMA-22025B
2 - 20 GHz GaAs MMIC
Power Amplifier
Data Sheet
March 2007
MEASURED DATA
(1)
Output Power
VDD = +8.0V, IDD = 290mA, VG = -0.40V
Output Pow er @ +25C
Noise Figure, dB
Noise Figure
VDD = +8.0V, IDD = 290mA, VG = -0.50V
NF @ +25C
12
10
8
6
4
2
0
0
5
10
Frequency, GHz
15
20
33
31
29
27
25
23
21
0
5
10
Frequency, GHz
15
20
P1dB
P2dB
Small Signal Gain and VSWR at +25
o
C
M M A-2 2 0 2 5 B
V D D = + 8 . 0 V , ID D = 2 9 0 m A , V G = ~ - 0 . 4 0 V
14
12
10
8
6
4
2
0
0
5
10
15
F re q , G H z
Input/Output Return Loss, dB
0
-5
-1 0
-1 5
-2 0
-2 5
0
5
10
15
F re q , G H z
20
25
30
d B (S (1 ,1 ))
d B (S (2 ,2 ))
20
25
30
2
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Updated 5/29/2007, Page 2 of 4
SSG, dB
MMA-22025B
2 - 20 GHz GaAs MMIC
Power Amplifier
Data Sheet
March 2007
Small Signal Gain over Temperature Range
MMA-22025B
VDD = +8.0V, IDD = 290mA, VG = ~ - 0.40V
SSG, dB over Temp
14
12
10
8
6
4
2
0
0
5
10
15
Freq, GHz
20
25
30
_____ @ +25 ºC, _____ @ -40 ºC, _____ @ +85 ºC
(1) Test module per the assembly diagram of this data sheet. Connector (SMA, x2) plus microstrip line losses, ~ 0.23dB
at 10GHz, and 0.45dB at 20GHz, each at RF input and RF output, are de-embedded. Data include RF bond-wires.
Absolute Maximum Ratings
(*):
Parameter
Drain Voltage, VDD
Gate Voltage, VGG
Current, IDD
Channel Temperature
Operating Temperature
Storage Temperature
Rating
+ 9.5 V
-2V
400 mA
+175 ºC
-55 ºC to +85 ºC
-65 ºC to +175 ºC
RF Input Power
+ 25 dBm
(*) Operation exceeding the limits can cause permanent damage.
3
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Updated 5/29/2007, Page 3 of 4
MMA-22025B
2 - 20 GHz GaAs MMIC
Power Amplifier
Data Sheet
March 2007
MMA-022025B Bonding/Assembly Diagram
Bonding/Assembly Recommendations:
1. Use epoxy with good thermal and electrical conductivity to attach the device. Curing temperature should
maintain at approximately +150
°C.
2. Use 1.0 mil diameter Au wire, 2 parallel each pad for RF input and output pads. Keep the wire length less than 10
mils to minimize its impact to high frequency performance.
4
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Updated 5/29/2007, Page 4 of 4
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