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SFN050

Description
Power Field-Effect Transistor, 40A I(D), 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size2MB,60 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

SFN050 Overview

Power Field-Effect Transistor, 40A I(D), 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

SFN050 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSolitron Devices Inc.
Parts packaging codeTO-3-3L
package instructionTO-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain current (Abs) (ID)40 A
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.055 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-XUUC-N2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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