Updates to packages ............................................................................10
Rev. E | Page 2 of 12
AD780
SPECIFICATIONS
T
A
= 25°C, V
IN
= 5 V, unless otherwise noted.
Table 1.
Parameter
OUTPUT VOLTAGE
2.5 V Out
3.0 V Out
OUTPUT VOLTAGE DRIFT
1
−40°C to +85°C
−55°C to +125°C
LINE REGULATION
2.5 V Output, 4 V ≤+V
IN
≤ 36 V, T
MIN
to T
MAX
3.0 V Output, 4.5 V ≤+V
IN
≤ 36 V, T
MIN
to T
MAX
LOAD REGULATION, SERIES MODE
Sourcing 0 mA < I
OUT
< 10 mA
T
MIN
to T
MAX
Sinking −10 mA < I
OUT
< 0 mA
−40°C to +85°C
−55°C to +125°C
LOAD REGULATION, SHUNT MODE
I < I
SHUNT
< 10 mA
QUIESCENT CURRENT, 2.5 V SERIES MODE
2
–40°C to +85°C
−55°C to +125°C
MINIMUM SHUNT CURRENT
OUTPUT NOISE
0.1 Hz to 10 Hz
Spectral Density, 100 Hz
LONG-TERM STABILITY
3
TRIM RANGE
TEMPERATURE PIN
Voltage Output @ 25°C
Temperature Sensitivity
Output Resistance
SHORT-CIRCUIT CURRENT TO GROUND
TEMPERATURE RANGE
Specified Performance (A, B, C)
Operating Performance (A, B, C)
4
AD780AN/AD780AR
Min
Typ Max
2.495
2.995
2.505
3.005
7
20
10
10
50
75
75
75
150
75
0.75
0.8
0.7
4
100
20
4.0
500
560
1.9
3
30
620
4.0
500
560
1.9
3
30
620
1.0
1.3
1.0
0.75
0.8
0.7
4
100
20
4.0
500
560
1.9
3
30
620
Min
2.4985
2.9950
AD780CR
Typ Max
2.5015
3.0050
7
20
10
10
50
75
75
75
150
75
1.0
1.3
1.0
0.75
0.8
0.7
4
100
20
AD780BN/AD780BR
Min
Typ Max
2.499
2.999
2.501
3.001
3
Unit
V
V
ppm/°C
ppm/°C
µV/V
µV/V
µV/mA
µV/mA
µV/mA
µV/mA
µV/mA
µV/mA
mA
mA
mA
µV p-p
nV/√Hz
± ppm/1000 Hr
±%
mV
mV/°C
kΩ
mA
°C
°C
10
10
50
75
75
75
150
75
1.0
1.3
1.0
–40
–55
+85
+125
–40
–55
+85
+125
–40
–55
+85
+125
1
2
Maximum output voltage drift is guaranteed for all packages.
3.0 V mode typically adds 100 µA to the quiescent current. Also, I
q
increases by 2 µA/V above an input voltage of 5 V.
3
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
4
The operating temperature range is defined as the temperature extremes at which the device will still function. Parts may deviate from their specified performance
outside their specified temperature range.
Rev. E | Page 3 of 12
AD780
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
+V
IN
to Ground
TRIM Pin to Ground
TEMP Pin to Ground
Power Dissipation (25°C)
Storage Temperature
Lead Temperature
(Soldering 10 sec)
Output Protection
ESD Classification
Values
36 V
36 V
36 V
500 mW
−65°C to +150°C
300°C
Output safe for indefinite short to
ground and momentary short to V
IN
.
Class 1 (1000 V)
TRIM
V
OUT
2.5V/3.0V
O/P SELECT
GND
GND
TEMP
+V
IN
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum
specifications for extended periods may affect device reliability.
Figure 3. Die Layout
NOTES
Both V
OUT
pads should be connected to the output.
Die Thickness:
The standard thickness of Analog Devices
bipolar dice is 24 mil ± 2 mil.
Die Dimensions:
The dimensions given have a tolerance of
±2 mil.
Backing:
The standard backside surface is silicon (not plated).
Analog Devices does not recommend gold-backed dice for most
applications.
Edges:
A diamond saw is used to separate wafers into dice, thus
providing perpendicular edges halfway through the die. In
contrast to scribed dice, this technique provides a more uniform
die shape and size. The perpendicular edges facilitate handling
(such as tweezer pickup), while the uniform shape and size
simplify substrate design and die attach.
Top Surface:
The standard top surface of the die is covered by a
layer of glassivation. All areas are covered except bonding pads
and scribe lines.
Surface Metallization:
The metallization to Analog Devices
bipolar dice is aluminum. Minimum thickness is 10,000 Å.
Bonding Pads:
All bonding pads have a minimum size of
4.0 mil by 6.0 mil. The passivation windows have a minimum
size of 3.6 mil by 5.6 mil.
NC
1
+V
IN 2
TEMP
3
AD780
2.5V/3.0V O/PSELECT
(NC OR GND)
7
NC
8
NC = NO CONNECT
Figure 2. Pin Configuration, 8-Lead PDIP and SOIC Packages
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
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