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FL7730

Description
1000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size2MB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FL7730 Overview

1000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

FL7730 Parametric

Parameter NameAttribute value
Number of terminals6
Minimum breakdown voltage12 V
Processing package description2 × 2 MM, HALOGEN FREE AND ROHS COMPLIANT, MICROFET-6
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeSQUARE
Package SizeSMALL OUTLINE
surface mountYes
Terminal formNO
terminal coatingNickel Palladium
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current1 A
feedback capacitor655 pF
Maximum drain on-resistance0.0160 ohm
New Products, Tips and Tools for Power and Mobile Applications
Ultra Small Battery and
Load Switching Solutions
Offering designers a small-sized battery or load switching solution, with
excellent thermal characteristics, two new single P-Channel PowerTrench
®
MOSFETs are now available. Fairchild’s FDMA905P and FDME905PT
feature low on-state resistance in a low profile MicroFET
package (0.8mm
and 0.55mm max, respectively). The devices offer exceptional thermal
performance for their physical size, and are also well-suited for linear
mode applications.
BENCHMarks
VOL. 2, 2012
Advantages
• Saves board space with
MicroFET package
• Low profile package
• Guaranteed low R
DS(ON)
at 4.5V/2.5V/1.8V V
GS
• Excellent thermal performance
Applications
• Handsets
• Ultraportable devices
For more information, please visit:
www.fairchildsemi.com/pf/FD/FDMA905P.html
www.fairchildsemi.com/pf/FD/FDME905PT.html
Product
Number
B
VDSS
(V)
V
GS
(V)
V
GS
(th)
(V) Typ
R
DS(ON)
(mΩ) Typ
4.5V
2.5V
1.8V
Qg Typ
(nC) @
V
GS
=
4.5V
21
I
D
(A)
P
D
(W)
Package
2.0mm x
2.0mm x
0.8mm
1.6mm x
1.6mm x
0.55mm
FDMA905P
12
±8
0.7
14
17
21
10
2.4
FDME905PT
12
±8
0.7
18
22
28
14
8
2.1

FL7730 Related Products

FL7730 MDB10S MDB6S S320
Description 1000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE RECTIFIER DIODE
Number of terminals 6 4 4 2
surface mount Yes YES YES YES
Terminal form NO GULL WING GULL WING C BEND
Terminal location pair DUAL DUAL DUAL
Number of components 1 4 4 1
Minimum breakdown voltage 12 V 1000 V 600 V -
Brand Name - Fairchild Semiconduc Fairchild Semiconduc Fairchild Semiconduc
Is it lead-free? - Lead free Lead free Lead free
Is it Rohs certified? - conform to conform to conform to
Maker - Fairchild Fairchild Fairchild
Parts packaging code - TDI TDI DO-214
package instruction - HALOGEN FREE AND ROHS COMPLIANT, MICRODIP-4 HALOGEN FREE AND ROHS COMPLIANT, MICRODIP-4 ROHS COMPLIANT, SMB, MINI PACKAGE-2
Contacts - 4 4 2
Manufacturer packaging code - 4LD, MICRO SURFACE MOUNT, 1.3 x 4 x 5MM 4LD, MICRO SURFACE MOUNT, 1.3 x 4 x 5MM 2LD, SMB, JEDEC DO-214, VARIATION AA
Reach Compliance Code - _compli _compli _compli
ECCN code - EAR99 EAR99 EAR99
Samacsys Descripti - Diode Rectifier Bridge Single 1KV 1A 4-Pin Micro DIP SMD T/R Bridge Rectifier 600V 1A MicroDIP4 Fairchild Semiconductor MDB6S, Bridge Rectifier, 1A 600V, 4-Pin MicroDIP ON SEMICONDUCTOR/FAIRCHILD - S320 - DIODE, FAST RECOVERY, 3A, 200V, DO-214AA
Configuration - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS SINGLE
Diode component materials - SILICON SILICON SILICON
Diode type - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.1 V 1.1 V 0.9 V
JESD-30 code - R-PDSO-G4 R-PDSO-G4 R-PDSO-C2
JESD-609 code - e3 e3 e3
Humidity sensitivity level - 1 1 1
Maximum non-repetitive peak forward current - 30 A 30 A 80 A
Phase - 1 1 1
Maximum operating temperature - 150 °C 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C -65 °C
Maximum output current - 1 A 1 A 3 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260 260
Maximum repetitive peak reverse voltage - 1000 V 600 V 200 V
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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