125mA, 25V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Texas Instruments |
| package instruction | CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Shell connection | SUBSTRATE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 25 V |
| Maximum drain current (Abs) (ID) | 0.125 A |
| Maximum drain current (ID) | 0.125 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 4 pF |
| JEDEC-95 code | TO-72 |
| JESD-30 code | O-MBCY-W4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 0.36 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| 3N161 | 2SC5101_15 | 2N6452 | 2N6453 | 2N6454 | 3N202 | 3N205 | 3N174 | BF801 | 3N217 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | 125mA, 25V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 | Silicon NPN Power Transistors | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72 | 20mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 | BF801 | 50mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 |
| Is it Rohs certified? | incompatible | - | incompatible | incompatible | - | incompatible | incompatible | incompatible | incompatible | - |
| package instruction | CYLINDRICAL, O-MBCY-W4 | - | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | - | - | CYLINDRICAL, O-MBCY-W4 | - | CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code | not_compliant | - | _compli | _compli | unknow | not_compliant | not_compliant | not_compliant | not_compliant | unknow |
| Shell connection | SUBSTRATE | - | ISOLATED | ISOLATED | ISOLATED | SOURCE AND SUBSTRATE | SOURCE AND SUBSTRATE | SUBSTRATE | - | SUBSTRATE |
| Configuration | SINGLE WITH BUILT-IN DIODE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE WITH BUILT-IN DIODE |
| FET technology | METAL-OXIDE SEMICONDUCTOR | - | JUNCTION | JUNCTION | JUNCTION | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | JUNCTION | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 4 pF | - | 5 pF | 5 pF | 5 pF | 0.03 pF | 0.03 pF | 0.7 pF | - | 2 pF |
| JEDEC-95 code | TO-72 | - | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 | - | TO-72 |
| JESD-30 code | O-MBCY-W4 | - | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | - | O-MBCY-W4 |
| Number of components | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | - | 1 |
| Number of terminals | 4 | - | 4 | 4 | 4 | 4 | 4 | 4 | - | 4 |
| Operating mode | ENHANCEMENT MODE | - | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | ENHANCEMENT MODE | - | DEPLETION MODE |
| Maximum operating temperature | 200 °C | - | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | - | METAL | METAL | METAL | METAL | METAL | METAL | - | METAL |
| Package shape | ROUND | - | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | - | ROUND |
| Package form | CYLINDRICAL | - | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | - | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| Polarity/channel type | P-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | P-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.36 W | - | 0.36 W | 0.36 W | 0.36 W | 0.36 W | 0.36 W | 0.36 W | 0.036 W | 0.36 W |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| surface mount | NO | - | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | - | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | - | WIRE |
| Terminal location | BOTTOM | - | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| transistor applications | SWITCHING | - | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | CHOPPER | - | SWITCHING |
| Transistor component materials | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | - | SILICON |
| Base Number Matches | - | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
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