BF801 datasheet, PDF - EEWORLD Datasheet

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BF801: DescriptionBF801; CategoryDiscrete semiconductor The transistor; File Size68KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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BF801 Overview

BF801

BF801 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	not_compliant
FET technology	JUNCTION
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.036 W
surface mount	NO
Base Number Matches	1

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	BF801	2SC5101_15	2N6452	2N6453	2N6454	3N202	3N205	3N174	3N161	3N217
Description	BF801	Silicon NPN Power Transistors	N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72	N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72	N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72	20mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72	125mA, 25V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72	50mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
Is it Rohs certified?	incompatible	-	incompatible	incompatible	-	incompatible	incompatible	incompatible	incompatible	-
Reach Compliance Code	not_compliant	-	_compli	_compli	unknow	not_compliant	not_compliant	not_compliant	not_compliant	unknow
FET technology	JUNCTION	-	JUNCTION	JUNCTION	JUNCTION	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature	200 °C	-	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	P-CHANNEL	P-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.036 W	-	0.36 W	0.36 W	0.36 W	0.36 W	0.36 W	0.36 W	0.36 W	0.36 W
surface mount	NO	-	NO	NO	NO	NO	NO	NO	NO	NO
Base Number Matches	1	-	1	1	1	1	1	1	-	-
package instruction	-	-	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	-	-	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4
Shell connection	-	-	ISOLATED	ISOLATED	ISOLATED	SOURCE AND SUBSTRATE	SOURCE AND SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE
Configuration	-	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Maximum feedback capacitance (Crss)	-	-	5 pF	5 pF	5 pF	0.03 pF	0.03 pF	0.7 pF	4 pF	2 pF
JEDEC-95 code	-	-	TO-72	TO-72	TO-72	TO-72	TO-72	TO-72	TO-72	TO-72
JESD-30 code	-	-	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4
Number of components	-	-	1	1	1	1	1	1	1	1
Number of terminals	-	-	4	4	4	4	4	4	4	4
Operating mode	-	-	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	DEPLETION MODE
Package body material	-	-	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	-	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	-	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	-	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Certification status	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal form	-	-	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	-	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	-	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	CHOPPER	SWITCHING	SWITCHING
Transistor component materials	-	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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