3N217 datasheet, PDF - EEWORLD Datasheet

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3N217: Description50mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72; CategoryDiscrete semiconductor The transistor; File Size68KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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3N217 Overview

50mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72

3N217 Parametric

Parameter Name	Attribute value
Maker	Texas Instruments
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	SUBSTRATE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	0.05 A
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	2 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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package instruction	CYLINDRICAL, O-MBCY-W4	-	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	-	-	CYLINDRICAL, O-MBCY-W4	-	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknow	-	_compli	_compli	unknow	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
Shell connection	SUBSTRATE	-	ISOLATED	ISOLATED	ISOLATED	SOURCE AND SUBSTRATE	SOURCE AND SUBSTRATE	SUBSTRATE	-	SUBSTRATE
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE WITH BUILT-IN DIODE
FET technology	METAL-OXIDE SEMICONDUCTOR	-	JUNCTION	JUNCTION	JUNCTION	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	JUNCTION	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	2 pF	-	5 pF	5 pF	5 pF	0.03 pF	0.03 pF	0.7 pF	-	4 pF
JEDEC-95 code	TO-72	-	TO-72	TO-72	TO-72	TO-72	TO-72	TO-72	-	TO-72
JESD-30 code	O-MBCY-W4	-	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	-	O-MBCY-W4
Number of components	1	-	1	1	1	1	1	1	-	1
Number of terminals	4	-	4	4	4	4	4	4	-	4
Operating mode	DEPLETION MODE	-	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Maximum operating temperature	200 °C	-	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	-	METAL	METAL	METAL	METAL	METAL	METAL	-	METAL
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	-	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	P-CHANNEL	N-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	0.36 W	-	0.36 W	0.36 W	0.36 W	0.36 W	0.36 W	0.36 W	0.036 W	0.36 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
surface mount	NO	-	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	-	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	-	WIRE
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM
transistor applications	SWITCHING	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	CHOPPER	-	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-	SILICON
Is it Rohs certified?	-	-	incompatible	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible
Peak Reflow Temperature (Celsius)	-	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Maximum time at peak reflow temperature	-	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Base Number Matches	-	-	1	1	1	1	1	1	1	-

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