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Datasheet> All Categories > Discrete semiconductor> Small signal Schottky diode> MMBD352
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MMBD352

Description
SILICON, UHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    Small signal Schottky diode   
File Size226KB，2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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MMBD352 Overview

SILICON, UHF BAND, MIXER DIODE

MMBD352 Parametric

Parameter NameAttribute value
Case StyleSOT-23
IF(A)-
VRRM (V)7
IFSM (A)-
VF (V)0.6
@ IF (A)10
Maximum reverse current10
TRR(nS)
classDiodes

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MMBD352-355
Dual Hot Carrier Mixer Diodes
SOT-23
Features
Very low capacitance—
Less than 1.0pF@zero V.
Low forward voltage—I
F
=10mA.
Power dissipation P
d
=300mW
Pb/RoHS Free
Applications
Designed primarily for UHF mixer applications.
Dimensions in inches and (millimeters)
MMBD352
MMBD353
MMBD354
MMBD355
Ordering Information
Type No.
MMBD352
MMBD353
MMBD354
MMBD355
Marking
M5G
M4F
M6H
MJ1
Package Code
SOT-23
SOT-23
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Continuous reverse voltage
Power Dissipation
Thermal Resistance,Junction-to-Ambient
Junction and storage temperature
Symbol
V
R
P
d
R
θJA
T
J
,T
STG
Limits
7.0
300
417
-55-150
Unit
V
mW
℃/W
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Diode Capacitanc
Symbol
V
(BR)
V
F
I
R
C
D
1.0
Min.
7.0
0.60
0.25
10
Typ.
Max.
Unit
V
V
μA
pF
Conditions
I
R
=100μA
I
F
=10mA
V
R
=3.0V
V
R
=7.0V
V
R
=0V,f=1MHz
http://www.luguang.cn
mail:lge@luguang.cn

MMBD352 Related Products

MMBD352 MMBD353 MMBD354 MMBD355
Description SILICON, UHF BAND, MIXER DIODE SILICON, UHF BAND, MIXER DIODE SILICON, UHF BAND, MIXER DIODE SILICON, VHF BAND, MIXER DIODE

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