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MMBD354

Description
SILICON, UHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    Small signal Schottky diode   
File Size226KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

MMBD354 Overview

SILICON, UHF BAND, MIXER DIODE

MMBD354 Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
Manufacturer packaging codeSOT-23
MMBD352-355
Dual Hot Carrier Mixer Diodes
SOT-23
Features
Very low capacitance—
Less than 1.0pF@zero V.
Low forward voltage—I
F
=10mA.
Power dissipation P
d
=300mW
Pb/RoHS Free
Applications
Designed primarily for UHF mixer applications.
Dimensions in inches and (millimeters)
MMBD352
MMBD353
MMBD354
MMBD355
Ordering Information
Type No.
MMBD352
MMBD353
MMBD354
MMBD355
Marking
M5G
M4F
M6H
MJ1
Package Code
SOT-23
SOT-23
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Continuous reverse voltage
Power Dissipation
Thermal Resistance,Junction-to-Ambient
Junction and storage temperature
Symbol
V
R
P
d
R
θJA
T
J
,T
STG
Limits
7.0
300
417
-55-150
Unit
V
mW
℃/W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Diode Capacitanc
Symbol
V
(BR)
V
F
I
R
C
D
1.0
Min.
7.0
0.60
0.25
10
Typ.
Max.
Unit
V
V
μA
pF
Conditions
I
R
=100μA
I
F
=10mA
V
R
=3.0V
V
R
=7.0V
V
R
=0V,f=1MHz
http://www.luguang.cn
mail:lge@luguang.cn

MMBD354 Related Products

MMBD354 MMBD352 MMBD353 MMBD355
Description SILICON, UHF BAND, MIXER DIODE SILICON, UHF BAND, MIXER DIODE SILICON, UHF BAND, MIXER DIODE SILICON, VHF BAND, MIXER DIODE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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