MMBD353 datasheet, PDF - EEWORLD Datasheet

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MMBD353: DescriptionSILICON, UHF BAND, MIXER DIODE; CategoryDiscrete semiconductor diode; File Size226KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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MMBD353 Overview

SILICON, UHF BAND, MIXER DIODE

MMBD353 Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
Manufacturer packaging code	SOT-23

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MMBD352-355

Dual Hot Carrier Mixer Diodes

SOT-23

Features

Very low capacitance—

Less than 1.0pF@zero V.

Low forward voltage—I

=10mA.

Power dissipation P

=300mW

Pb/RoHS Free

Applications

Designed primarily for UHF mixer applications.

Dimensions in inches and (millimeters)

MMBD352

MMBD353

MMBD354

MMBD355

Ordering Information

Type No.

MMBD352

MMBD353

MMBD354

MMBD355

Marking

M5G

M4F

M6H

MJ1

Package Code

SOT-23

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Parameter

Continuous reverse voltage

Power Dissipation

Thermal Resistance,Junction-to-Ambient

Junction and storage temperature

Symbol

θJA

STG

Limits

7.0

300

417

-55-150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Parameter

Reverse Breakdown Voltage

Forward voltage

Reverse current

Diode Capacitanc

Symbol

(BR)

1.0

Min.

7.0

0.60

0.25

Typ.

Max.

Unit

μA

Conditions

=100μA

=10mA

=3.0V

=7.0V

=0V,f=1MHz

http://www.luguang.cn

mail:lge@luguang.cn

MMBD353 Related Products

	MMBD353	MMBD352	MMBD354	MMBD355
Description	SILICON, UHF BAND, MIXER DIODE	SILICON, UHF BAND, MIXER DIODE	SILICON, UHF BAND, MIXER DIODE	SILICON, VHF BAND, MIXER DIODE

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