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SF1608G

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size229KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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SF1608G Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

SF1608G Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionGREEN, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingPURE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current8 A
Maximum non-repetitive peak forward current125 A
SF1601G-SF1608G
16.0AMP. Glass Passivated Super Fast Rectifiers
TO-220AB
Features
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application
Mechanical Data
Cases: TO-220AB Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds .16”,(4.06mm) from case.
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SF
SF
SF
Symbol
SF
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @T
C
= 100
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 8.0A
Maximum DC Reverse Current
o
@T
A
=25 C at Rated DC Blocking Voltage
@ T
A
=100
o
C
Maximum Reverse Recovery Time
(Note 1)
Typical Junction Capacitance (Note 2)
SF
SF
SF
SF
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
Units
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
16.0
125
0.975
10
400
35
80
60
o
1.3
1.7
V
uA
uA
nS
pF
C/W
o
C
o
C
Trr
Cj
Typical Thermal Resistance (Note 3)
1.5
R
θJC
Operating Temperature Range
T
J
-65 to +150
Storage Temperature Range
T
STG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mounted on Heatsink Size of 3” x 5” x 0.25” Al-Plate.
http://www.luguang.cn
mail:lge@luguang.cn

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