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MBR1690

Description
16 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC
CategoryDiscrete semiconductor    Schottky diode   
File Size217KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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MBR1690 Overview

16 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC

MBR1690 Parametric

Parameter NameAttribute value
Case StyleTO-220AC
IF(A)16
Maximum recurrent peak reverse voltage90
Peak forward surge curre150
Maximum instantaneous forward voltage0.85
@IF(A)16
Maximum reverse curre1.0
TJ(℃)/
classDiodes
MBR1630-MBR16100
Schottky Barrier Rectifier
VOLTAGE RANGE: 30 -
100
V
CURRENT: 16 A
Features
High s urge capacity.
111
For us e in low voltage, high frequency inverters , free
wheeling, and polarity protection applications .
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
19.0± 0.5
2.8± 0.1
TO-220AC
10.2± 0.2
φ
3.8± 0.15
4.5± 0.2
1.4± 0.2
Metal s ilicon junction, m ajority carrier conduction.
PIN
1
2
8.9± 0.2
2.6± 0.2
3.5± 0.3
13.8± 0.5
5.0± 0.1
0.5± 0.1
Mechanical Data
Cas e:JEDEC TO-220AC,m olded plas tic body
Polarity: As m arked
Pos ition: Any
Weight:
0.069 ounces,1.96 gram
0.9± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
1630
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 125°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage
(Note 1)
(I
F
=16A,T
C
=125
)
(I
F
=16A,T
C
=25 )
MBR
1635
35
25
35
MBR MBR MBR
1640 1645 1650
40
28
40
45
32
45
16
150
50
35
50
MBR
1660
60
42
60
MBR MBR
UNITS
1690 16100
90
63
90
100
70
100
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
21
30
0.63
0.75
0.65
1.0
0.85
V
-
V
F
0.57
0.2
40
1.5
-
55
---- + 150
-
55
---- + 175
Maximum reverse current
at rated DC blocking voltage
@T
C
=25
@T
C
=125
I
R
R
θJC
T
J
T
STG
mA
50
/W
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
http://www.luguang.cn
mail:lge@luguang.cn

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