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EMB11

Description
General purpose (dual digital transistors)
File Size57KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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EMB11 Overview

General purpose (dual digital transistors)

EMB11 / UMB11N / IMB11A
Transistors
General purpose
(dual digital transistors)
EMB11 / UMB11N / IMB11A
Features
1) Two DTA114E chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMB11
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : B11
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
(3)
UMB11N
0.2
0.5
0.5 0.5
1.0
1.6
(6)
1.25
2.1
0.1Min.
0to0.1
The following characteristics apply to both DTr
1
and
DTr
2
.
0.15
(1)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Equivalent circuit
EMB11 / UMB11N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=10kΩ
R
2
=10kΩ
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
Abbreviated symbol : B11
IMB11A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=10kΩ
R
2
=10kΩ
(1)
IMB11A
(6)
0.3
(4)
(5)
1.6
2.8
0.15
(6)
0.3to0.6
0to0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
−50
−40
10
Output current
EMB11, UMB11N
Power
dissipation IMB11A
Junction temperature
Storage temperature
−50
−100
150 (TOTAL)
300 (TOTAL)
150
−55
to
+150
˚C
˚C
Unit
V
V
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : B11
mA
1
2
mW
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
(3)
(2)
(1)
0.7
0.9
2.0
(5)
(2)
Rev.A
1/2

EMB11 Related Products

EMB11 IMB11A UMB11N
Description General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors)
Is it Rohs certified? - conform to conform to
Reach Compliance Code - compli compli
Maximum collector current (IC) - 0.05 A 0.05 A
Minimum DC current gain (hFE) - 30 30
JESD-609 code - e1 e2
Number of components - 2 2
Polarity/channel type - PNP PNP
Maximum power dissipation(Abs) - 0.3 W 0.15 W
surface mount - YES YES
Terminal surface - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Copper (Sn/Cu)
Transistor component materials - SILICON SILICON
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