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UMB11N

Description
General purpose (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size57KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

UMB11N Overview

General purpose (dual digital transistors)

UMB11N Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
Maximum collector current (IC)0.05 A
Minimum DC current gain (hFE)30
JESD-609 codee2
Number of components2
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Transistor component materialsSILICON
Base Number Matches1
EMB11 / UMB11N / IMB11A
Transistors
General purpose
(dual digital transistors)
EMB11 / UMB11N / IMB11A
Features
1) Two DTA114E chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMB11
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : B11
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
(3)
UMB11N
0.2
0.5
0.5 0.5
1.0
1.6
(6)
1.25
2.1
0.1Min.
0to0.1
The following characteristics apply to both DTr
1
and
DTr
2
.
0.15
(1)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Equivalent circuit
EMB11 / UMB11N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=10kΩ
R
2
=10kΩ
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
Abbreviated symbol : B11
IMB11A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=10kΩ
R
2
=10kΩ
(1)
IMB11A
(6)
0.3
(4)
(5)
1.6
2.8
0.15
(6)
0.3to0.6
0to0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
−50
−40
10
Output current
EMB11, UMB11N
Power
dissipation IMB11A
Junction temperature
Storage temperature
−50
−100
150 (TOTAL)
300 (TOTAL)
150
−55
to
+150
˚C
˚C
Unit
V
V
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : B11
mA
1
2
mW
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
(3)
(2)
(1)
0.7
0.9
2.0
(5)
(2)
Rev.A
1/2

UMB11N Related Products

UMB11N EMB11 IMB11A
Description General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors)
Is it Rohs certified? conform to - conform to
Reach Compliance Code compli - compli
Maximum collector current (IC) 0.05 A - 0.05 A
Minimum DC current gain (hFE) 30 - 30
JESD-609 code e2 - e1
Number of components 2 - 2
Polarity/channel type PNP - PNP
Maximum power dissipation(Abs) 0.15 W - 0.3 W
surface mount YES - YES
Terminal surface Tin/Copper (Sn/Cu) - Tin/Silver/Copper (Sn/Ag/Cu)
Transistor component materials SILICON - SILICON
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