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5STH20H4501

Description
Assymetric SCR, 4500V V(DRM), 18V V(RRM), 1 Element, CERAMIC, PRESSPACK-4
CategoryAnalog mixed-signal IC    Trigger device   
File Size218KB,2 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5STH20H4501 Overview

Assymetric SCR, 4500V V(DRM), 18V V(RRM), 1 Element, CERAMIC, PRESSPACK-4

5STH20H4501 Parametric

Parameter NameAttribute value
MakerABB
package instructionCERAMIC, PRESSPACK-4
Contacts4
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Maximum DC gate trigger current120000 mA
Maximum DC gate trigger voltage4 V
JESD-30 codeO-CXDB-X4
Number of components1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Off-state repetitive peak voltage4500 V
Repeated peak reverse voltage18 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeASSYMETRIC SCR
V
DRM
V
RRM
I
PULSE
V
Dcmax
=
=
=
=
4.5
18
80
2.8
kV
V
kA
kV
High current high di/dt switch for
Pulsed Power Applications
5STH 20H4501
Features
• • • • • • • •
Asymmetric design
For single or repetitve pulse applications
Very high di/dt capability
Free Floating Silicon Technology
Glazed Ceramic Presspack Housing
High interdigitated gate stucture
Optimized as Closing Switch
High Reliability
Electrical Data
V
DRM
V
RRM
V
DC
I
PULSE
di/dt
Repetitive peak of-state voltage
Repetitive reverse blocking voltage
Permanent DC voltage for 100
FIT failure rate
Max. Pulse Current
Max. current rate of rise
Max. Gate trigger voltage
Recomm. Gate trigger current
Voltage drop
Limiting load integral
Threshold voltage
Slope resistance
Turn-on delay
4.5 kV
18 V
2.8 kV
80 kA
4.0 V
120 A
2.36 V
2.42 V
0.8 x10
6
Tj = 125°C
Tj = 125°C
At T
j
125 °C. Ambient cosmic
radiation at sea level in open air.
Half sine wave, Tj
50°C, tp
250
µs
di
G
/dt (min) 100 A/µs Tj = 25°
t = 20
µs
Tj = 50°C, I
T
= 3000 A
Tj = 125°C, I
T
= 3000 A
tp = 250
µs,
Tj = 50 °C
Tj = 50°C / Tj = 125°C
Tj = 50°C
Tj = 125°C
18 kA/µs 1 Hz
V
GT
I
GT
V
t
I
2
t
V
T0
r
T
t
don
A
2
s
1.28 V
0.36 mΩ
0.38 mΩ
0.9
µs
Same device without coaxial gate cable, but fast-on pins: P/N 5STH 2045H0001
ABB Switzerland Ltd reserves the right to change specifications without notice
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