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BLF7G20LS-140P_15

Description
Power LDMOS transistor
File Size264KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLF7G20LS-140P_15 Overview

Power LDMOS transistor

BLF7G20LS-140P
Power LDMOS transistor
Rev. 2 — 17 August 2010
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
CW
GSM EDGE
f
(MHz)
1805 to 1880
1805 to 1880
I
Dq
(mA)
850
850
V
DS
(V)
28
28
P
L(AV)
(W)
125
60
G
p
(dB)
17
17.5
η
D
(%)
54
41
ACPR
400k
(dBc)
-
−61
ACPR
600k
(dBc)
-
−75
EVM
rms
(%)
-
2.7
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2000 MHz frequency range
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