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5SDD65H2200

Description
Rectifier Diode, 1 Phase, 1 Element, 6520A, 2000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size73KB,5 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SDD65H2200 Overview

Rectifier Diode, 1 Phase, 1 Element, 6520A, 2000V V(RRM), Silicon,

5SDD65H2200 Parametric

Parameter NameAttribute value
MakerABB
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XEDB-N2
Maximum non-repetitive peak forward current63000 A
Number of components1
Phase1
Number of terminals2
Maximum output current6520 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
5SDD 65H2400
5SDD 65H2400
Old part no. DV 889-6500-24
Rectifier Diode
Properties
§
§
§
§
Industry standard housing
Suitable for parallel operation
High operating temperature
Low forward voltage drop
Key Parameters
= 2 400
V
RRM
= 6 520
I
FAVm
= 59 000
I
FSM
= 0.870
V
TO
= 0.057
r
T
V
A
A
V
mΩ
Types
V
RRM
5SDD 65H2400
5SDD 65H2200
Conditions:
2 400 V
2 200 V
T
j
= 0 ÷ 190 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
F
m
m
D
S
D
a
Mounting force
Weight
Surface creepage
distance
Air strike distance
50 ± 5 kN
0.9 kg
40 mm
20 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - DV/159/05 Jul-10
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